參數(shù)資料
型號： S1006FS31
元件分類： 晶閘管
英文描述： 6 A, 100 V, SCR, TO-220AB
封裝： TO-220AB, 3 PIN
文件頁數(shù)： 10/12頁
文件大小： 188K
代理商： S1006FS31
Sensitive SCRs
Teccor Electronics, Inc.
5-7
Sensitive SCRs
(972) 580-7777
Electrical Specification Notes
(1)
See Figures 5.1 through 5.9 for current ratings at specified operat-
ing case temperatures.
(2)
See Figure 5.10 for IGT vs TC.
(3)
See Figure 5.11 for instantaneous on-state current (iT) vs on-state
voltage (vT) - (typical).
(4)
See Figure 5.12 for VGT vs TC.
(5)
See Figure 5.13 for IH vs TC.
(6)
For more than one full cycle, see Figure 5.14.
(7)
0.8 - 4.0A devices also have a pulse peak forward current on-state
rating (repetitive) of 75A. This rating applies for operation at 60Hz,
75°C maximum tab (or anode) lead temperature, switching from
80V peak, sinusoidal current pulse width of 10
s minimum, 15s
maximum. See Figures 5.20 and 5.21.
(8)
See Figure 5.15 for tgt vs IGT.
(9)
Test conditions as follows:
TC ≤ 80°C, rectangular current waveform; rate-of-rise of current ≤
10A/
s. Rate-of-reversal of current ≤ 5A/s. ITM = 1A (50s pulse)
Repetition Rate = 60pps. VRRM = Rated.
VR = 15V minimum, VDRM = Rated. Rate-of-rise reapplied forward
blocking voltage= 5V/
s. Gate Bias = 0V, 100 (during turn-off
time interval).
(10) Test condition is maximum rated RMS current except TO-92
devices are 1.2APK; T106/T107 devices are 4APK.
(11) VD = 6VDC, RL = 100. See Figure 5.19 for simple test circuit for
measuring gate trigger voltage and gate trigger current.
(12) See Figures 5.1 through 5.9 for maximum allowable case temper-
ature at maximum rated current.
(13) IGT = 500A maximum for TC = -40°C for T106 devices.
(14) IH = 10mA maximum for TC = -65°C for 2N5060 Series and
2N6564 Series devices.
(15) IH = 6mA maximum for TC = -40°C for T106 devices.
(16) Pulse Width
≤ 10s.
(17) IGT = 350A maximum at TC = -65°C for 2N5060 Series and
2N6564 Series devices.
(18) Latching current can be higher than 20mA for higher IGT types.
Also latching current can be much higher at -40°C. See Figure
5.18.
(19) TC = TJ for test conditions in off-state.
IGM
VGRM
PGM
PG(AV)
ITSM
dv/dt
di/dt
tgt
tq
l2t
Peak Gate
Current
(16)
Amps
Peak
Reverse
Gate
Voltage
Volts
Peak Gate
Power
Dissipation
(16)
Watts
Average
Gate Power
Dissipation
Watts
Peak One
Cycle Surge
Forward
Current
(6) (12)
Amps
Critical Rate-
Of-Rise Of
Forward
Off-State
Voltage
Volts/
Sec
Maximum
Rate-Of-Change
Of On-State Current
IGT = 50mA
With 0.1
s
Rise Time
Amps/
Sec
Gate Controlled
Turn-On Time
Gate Pulse = 10mA
Min. Width = 15
s
With Rise Time
≤ 0.1 s
(8)
Sec
Circuit
Commutated
Turn-Off
Time
(9)
Sec
RMS Surge
(Non-Repetitive)
On-State
Current For
A Period Of
8.3 mSec For
Fusing
Amps2Sec
TC = 110°C
MIN
60 Hz
50 Hz
TYP
MAX
1.0
6.0
1.0
0.1
100
83
20
100
4.0
50
41
1.0
6.0
1.0
0.1
100
83
20
100
5.0
45
41
1.0
6.0
1.0
0.1
100
83
10
100
4.0
50
41
1.0
6.0
1.0
0.1
100
83
10
100
5.0
45
41
1.0
6.0
1.0
0.1
100
83
10
100
4.0
50
41
1.0
6.0
1.0
0.1
100
83
10
100
5.0
45
41
1.0
6.0
1.0
0.1
100
83
5
100
4.0
50
41
1.0
6.0
1.0
0.1
100
83
5
100
5.0
45
41
1.0
6.0
1.0
0.1
100
83
5
100
4.0
50
41
1.0
6.0
1.0
0.1
100
83
5
100
5.0
45
41
1.0
6.0
1.0
0.1
100
83
20
100
4.0
50
41
1.0
6.0
1.0
0.1
100
83
20
100
5.0
45
41
1.0
6.0
1.0
0.1
100
83
10
100
4.0
50
41
1.0
6.0
1.0
0.1
100
83
10
100
5.0
45
41
1.0
6.0
1.0
0.1
100
83
10
100
4.0
50
41
1.0
6.0
1.0
0.1
100
83
10
100
5.0
45
41
1.0
6.0
1.0
0.1
100
83
5
100
4.0
50
41
1.0
6.0
1.0
0.1
100
83
5
100
5.0
45
41
1.0
6.0
1.0
0.1
100
83
5
100
4.0
50
41
1.0
6.0
1.0
0.1
100
83
5
100
5.0
45
41
1.0
6.0
1.0
0.1
100
83
20
100
4.0
50
41
1.0
6.0
1.0
0.1
100
83
20
100
5.0
45
41
1.0
6.0
1.0
0.1
100
83
10
100
4.0
50
41
1.0
6.0
1.0
0.1
100
83
10
100
5.0
45
41
1.0
6.0
1.0
0.1
100
83
10
100
4.0
50
41
1.0
6.0
1.0
0.1
100
83
10
100
5.0
45
41
1.0
6.0
1.0
0.1
100
83
5
100
4.0
50
41
1.0
6.0
1.0
0.1
100
83
5
100
5.0
45
41
1.0
6.0
1.0
0.1
100
83
5
100
4.0
50
41
1.0
6.0
1.0
0.1
100
83
5
100
5.0
45
41
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