參數(shù)資料
型號: S-93C56BD0I-I8T1G
元件分類: PROM
英文描述: 128 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8
封裝: LEAD FREE, SNT-8
文件頁數(shù): 13/48頁
文件大?。?/td> 803K
代理商: S-93C56BD0I-I8T1G
CMOS SERIAL E2PROM
S-93C46B/56B/66B
Rev.5.0_00
Seiko Instruments Inc.
20
Write Disable Function when Power Supply Voltage is Low
The S-93C46B/56B/66B provides a built-in detector to detect a low power supply voltage and disable
writing. When the power supply voltage is low or at power application, the write instructions (WRITE,
ERASE, WRAL, and ERAL) are cancelled, and the write disable state (EWDS) is automatically set. The
detection voltage is 1.75 V typ., the release voltage is 2.05 V typ., and there is a hysteresis of about 0.3 V
(refer to Figure 21). Therefore, when a write operation is performed after the power supply voltage has
dropped and then risen again up to the level at which writing is possible, a write enable instruction (EWEN)
must be sent before a write instruction (WRITE, ERASE, WRAL, or ERAL) is executed.
When the power supply voltage drops during a write operation, the data being written to an address at that
time is not guaranteed.
Release voltage (
+VDET)
2.05 V Typ.
Power supply voltage
Hysteresis
About 0.3 V
Detection voltage (
VDET)
1.75 V Typ.
Write instruction cancelled
Write disable state (EWDS) automatically set
Figure 21 Operation when Power Supply Voltage is Low
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相關代理商/技術參數(shù)
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