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參數(shù)資料
| 型號(hào)： | RN1310 |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) |
| 中文描述： | 東芝npn型晶體管硅外延型（厘進(jìn)程） |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大?。?/td> | 162K |
| 代理商： | RN1310 |
RN1310,RN1311
2001-06-07
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1310,RN1311
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
With built-in bias resistors
Simplify circuit design
Reduce a quantity of parts and manufacturing process
Complementary to RN2310, RN2311
Equivalent Circuit
Maximum Ratings
(Ta = 25°C)
Characterisstic
Symbol
Rating
Unit
Collector-base voltage
V
CBO
50
V
Collector-emitter voltage
V
CEO
50
V
Emitter-base voltage
V
EBO
5
V
Collector current
I
c
100
mA
Collector power dissipation
P
c
100
mW
Junction temperature
T
j
150
°C
Storage temperature range
T
stg
55~150
°C
Electrical Characteristics
(Ta = 25°C)
Characteristic
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
I
CBO
―
V
CB
= 50V, I
E
= 0
―
―
100
nA
Emitter cut-off current
I
EBO
―
V
EB
= 5V, I
C
= 0
―
―
100
nA
DC current gain
h
FE
―
V
CE
= 5V, I
C
= 1mA
120
―
700
―
Collector-emitter saturation voltage
V
CE (sat)
―
I
C
= 5mA, I
B
= 0.25mA
―
0.1
0.3
V
Translation frequency
f
T
―
V
CE
= 10V, I
C
= 5mA
―
250
―
MHz
Collector output capacitance
C
ob
―
V
CB
= 10V, I
E
= 0, f = 1MHz
―
3
6
pF
RN1310
3.29
4.7
6.11
Input resistor
RN1311
R1
―
―
7
10
13
k
JEDEC
EIAJ
TOSHIBA
Weight: 0.006g
―
SC-70
2-2E1A
Unit: mm
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PDF描述 |
|---|---|
| RN1311 | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) |
| RN1314 | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) |
| RN1315 | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) |
| RN1316 | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) |
| RN1317 | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) |
相關(guān)代理商/技術(shù)參數(shù) |
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| RN1310(TE85L,F) | 功能描述:開(kāi)關(guān)晶體管 - 偏壓電阻器 100mA 50volts 3Pin 4.7Kohms RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
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