參數(shù)資料
型號: RFP8P06LE
廠商: HARRIS SEMICONDUCTOR
元件分類: JFETs
英文描述: 8A, 60V, 0.300 Ohm, ESD Rated, P-Channel Power MOSFET(8A, 60V, 0.300Ω,額定靜電釋放P溝道功率MOS場效應(yīng)管)
中文描述: 8 A, 60 V, 0.33 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件頁數(shù): 7/8頁
文件大?。?/td> 102K
代理商: RFP8P06LE
7-17
PSpice Electrical Model
.SUBCKT RFD8P06LE 2 1 3 REV 7/29/96
CA 12 8 1.50e-9
CB 15 14 1.50e-9
CIN 6 8 6.30e-10
DBODY 5 7 DBDMOD
DBREAK 7 11 DBKMOD
DESD1 91 9 DESD1MOD
DESD2 91 7 DESD2MOD
DPLCAP 10 6 DPLCAPMOD
EBREAK 5 11 17 18 -67.9
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 5 10 8 6 1
EVTHRES 21 6 19 8 1
EVTEMP 6 20 18 22 1
IT 8 17 1
LDRAIN 2 5 1e-10
LGATE 1 9 2.92e-9
LSOURCE 3 7 2.92e-9
MSTRONG 16 6 8 8 MstrongMOD
MMED 16 6 8 8 MmedMOD
MWEAK 16 21 8 8 MweakMOD
RBREAK 17 18 RBKMOD 1
RDRAIN 50 16 RDSMOD 95e-3
RGATE 9 20 2.89
RIN 6 8 1e9
RSCL1 5 51 RSCLMOD 1e-6
RSCL2 5 50 1e3
RSOURCE 8 7 RSourceMOD 97e-3
RVTHRES 22 8 RVTHRESMOD 1
RVTEMP 18 19 RVTEMPMOD 1
S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD
VBAT 22 19 DC 1
ESCL 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)*1e6/26,7))}
.MODEL DBDMOD D (IS=2.5e-12 RS=4e-2 IKF=0.01 N=0.97 TIKF=0.012 TRS1=0.8e-4 TRS2=-5e-6 CJO=5.25e-10 VJ=0.75 M=0.41 TT=7.50e-8)
.MODEL DBKMOD D (IKF=5 N=0.75 RS=0.245 TRS1=1e-3 TRS2=1.6e-4)
.MODEL DESD1MOD D (BV=16.4 TBV1=-1.25e-3 TBV2=5.79e-7 RS=36 NBV=50 IBV=7e-6)
.MODEL DESD2MOD D (BV=16.2 TBV1=-8.3e-4 TBV2=8.9e-7 NBV=50 IBV=7e-6)
.MODEL DPLCAPMOD D (CJO=4.25e-10 IS=1e-30 N=10 VJ=0.499 M=0.561)
.MODEL MSTRONGMOD PMOS (VTO=-1.91 KP=11.55 IS=1e-30 N=10 TOX=1 L=1u W=1u)
.MODEL MMEDMOD PMOS (VTO=-1.51 KP=0.95 IS=1e-30 N=10 TOX=1 L=1u W=1u)
.MODEL MWEAKMOD PMOS (VTO=-1.18 KP=0.03 IS=1e-30 N=10 TOX=1 L=1u W=1u)
.MODEL RBKMOD RES (TC1=1.045e-3 TC2=-3.5e-7)
.MODEL RDSMOD RES (TC1=0.92e-2 TC2=1.55e-5)
.MODEL RSOURCEMOD RES (TC1=2e-3 TC2=0.5e-6)
.MODEL RSCLMOD RES (TC1=2e-3 TC2=0)
.MODEL RVTHRESMOD RES (TC1=-2.5e-3 TC2=0)
.MODEL RVTEMPMOD RES (TC1=-1.55e-3 TC2=7.5e-6)
.MODEL S1AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=5.25 VOFF=1.75)
.MODEL S1BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=1.75 VOFF=5.25)
.MODEL S2AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=0.5 VOFF=-0.5)
.MODEL S2BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-0.5 VOFF=0.5)
.ENDS
NOTE: For further discussion of the PSPICE model consult A New PSPICE Sub-circuit for the Power MOSFET Featuring Global Temperature
Options; authored by William J. Hepp and C. Frank Wheatley.
18
22
-
+
+
-
5
51
+
-
19
8
+
-
17
18
6
8
+
-
5
8
+
-
RBREAK
RVTEMP
VBAT
RVTHRES
IT
17
18
19
22
12
13
15
S1A
S1B
S2A
S2B
CA
CB
EGS
EDS
14
8
13
8
14
13
MWEAK
DBODY
RSOURCE
SOURCE
3
11
7
LSOURCE
RLSOURCE
CIN
RDRAIN
EVTHRES
16
21
8
MMED
MSTRO
DRAIN
2
LDRAIN
RLDRAIN
DBREAK
DPLCAP
ESLC
RSLC1
51
10
5
50
RSLC2
1
GATE
RGATE
EVTEMP
9
ESG
8
6
LGATE
RLGATE
20
+
-
+
-
EBREAK
DESD1
91
DESD2
6
RFD8P06LE, RFD8P06LESM, RFP8P06LE
相關(guān)PDF資料
PDF描述
RFP8P10 8A, 100V, 0.400 Ohm, P-Channel Power MOSFET(8A, 100V, 0.400 Ω,P溝道增強(qiáng)模式功率MOS場效應(yīng)管)
RFPIC12C509AG 18/20-Pin 8-Bit CMOS Microcontroller with UHF ASK/FSK Transmitter
RFPIC12C509AF 8-Pin, 8-Bit CMOS Microcontrollers
RFPIC12F675H 20-Pin FLASH-Based 8-Bit CMOS Microcontroller with UHF ASK/FSK Transmitter
RFPIC12F675 20-Pin FLASH-Based 8-Bit CMOS Microcontroller with UHF ASK/FSK Transmitter
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
RFP8P08 制造商:Harris Corporation 功能描述:MOSFET Transistor, P-Channel, TO-220AB
RFP8P10 功能描述:MOSFET TO-220 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
RFPA0133 制造商:RFMD 功能描述:AMP RF 380-960MHZ 3-5V 16QFN 制造商:RF Micro Devices Inc 功能描述:AMP, RF, 380-960MHZ, 3-5V, 16QFN
RFPA0133TR7 制造商:RF Micro Devices Inc 功能描述:IC PROG PWR AMP 16-QFN
RFPA1012 制造商:RFMD 功能描述:AMPLIFIER RF 400-2700MHZ 8DFN 制造商:RF Micro Devices Inc 功能描述:AMPLIFIER, RF, 400-2700MHZ, 8DFN