參數(shù)資料
型號(hào)： RFP8P06LE
廠商： HARRIS SEMICONDUCTOR
元件分類： JFETs
英文描述： 8A, 60V, 0.300 Ohm, ESD Rated, P-Channel Power MOSFET(8A, 60V, 0.300Ω，額定靜電釋放P溝道功率MOS場(chǎng)效應(yīng)管)
中文描述： 8 A, 60 V, 0.33 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件頁(yè)數(shù)： 3/8頁(yè)
文件大?。?/td> 102K
代理商： RFP8P06LE
7-13
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. PEAK CURRENT CAPABILITY
T
C
, CASE TEMPERATURE (
o
C)
P
0
0
25
50
75
100
175
0.2
0.4
0.6
0.8
1.0
1.2
125
150
-4
-2
0
25
50
75
100
125
150
-8
I
D
,
T
C
, CASE TEMPERATURE (
o
C)
-10
-6
175
t, RECTANGULAR PULSE DURATION (s)
10
1
Z
θ
J
,
T
10
-3
10
-2
10
-1
10
0
10
-5
10
-4
1.0
0.01
0.1
PEAK T
J
= P
DM
x Z
θ
JC
x R
θ
JC
+ T
C
P
DM
t
1
t
2
0.1
0.02
0.01
0.2
0.5
0.05
SINGLE PULSE
2.0
NOTES:DUTY FACTOR: D = t
1
/t
2
-100
-10
-1
-0.11
-10
-100
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
100
μ
s
10ms
100ms
DC
V
DS(MAX)
= -60V
1ms
T
C
= 25
o
C, T
J
= MAX RATED
10
-5
10
-4
10
-3
t, PULSE WIDTH (ms)
10
-2
10
-1
10
0
10
1
-10
-10
2
I
D
,
-5
V
GS
= -10V
V
GS
= -5V
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
FOR TEMPERATURES ABOVE 25
o
C
DERATE PEAK CURRENT
CAPABILITY AS FOLLOWS:
I
I25
175
-------150
–
=
T
C
= 25
o
C
RFD8P06LE, RFD8P06LESM, RFP8P06LE
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參數(shù)描述
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