- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄374588 > RFP7N35 (HARRIS SEMICONDUCTOR) 7A, 350V and 400V, 0.75 Ohm, N-Channel Power MOSFETs PDF資料下載
參數(shù)資料
| 型號(hào)： | RFP7N35 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 7A, 350V and 400V, 0.75 Ohm, N-Channel Power MOSFETs |
| 中文描述： | 7 A, 350 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 47K |
| 代理商： | RFP7N35 |
5-2
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
RFM7N35
350
350
7
15
±
20
100
0.8
-55 to 150
RFM7N40
400
400
7
15
±
20
100
0.8
-55 to 150
RFP7N35
350
350
7
15
±
20
75
0.6
-55 to 150
RFP7N40
400
400
7
15
±
20
75
0.6
-55 to 150
UNITS
V
V
A
A
V
W
W/
o
C
o
C
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
Drain to Gate Voltage (R
GS
= 1M
)
(Note 1). . . . . . . . . . . . . . . . . . . V
DGR
Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
D
Linear Derating Factor (Above 25
o
C) . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 (for TO-220) . . . . . . . . . . T
pkg
300
260
300
260
300
260
300
260
o
C
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
RFM7N35, RFP7N35
BV
DSS
I
D
= 250
μ
A, V
GS
= 0V
350
-
-
V
RFM7N40, RFP7N40
400
-
-
V
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
μ
A (Figure 8)
V
DS
= Rated BV
DSS
, T
C
= 25
o
C
V
DS
= 0.8 x Rated BV
DSS
, T
C
= 125
o
C
2
-
4
V
Zero Gate Voltage Drain Current
I
DSS
-
-
1
μ
A
-
-
25
μ
A
Gate to Source Leakage Current
I
GSS
V
GS
=
±
20V, V
DS
= 0V
-
-
±
100
nA
Drain to Source On Resistance (Note 2)
r
DS(ON)
I
D
= 7A, V
GS
= 10V (Figures 6, 7)
-
-
0.75
Drain to Source On Voltage (Note 2)
V
DS(ON)
I
D
= 7A, V
GS
= 10V
V
DS
= 200V, I
D
≈
3.5A, R
G
= 50
,
R
L
= 56
, V
GS
= 10V
(Figures 10, 11, 12)
-
-
5.25
V
Turn-On Delay Time
t
d(ON)
-
16
45
ns
Rise Time
t
r
-
54
75
ns
Turn-Off Delay Time
t
d(OFF)
-
170
250
ns
Fall Time
t
f
-
62
100
ns
Input Capacitance
C
ISS
V
DS
= 25V, V
GS
= 0V, f = 1MHz
(Figure 9)
-
-
1600
pF
Output Capacitance
C
OSS
-
-
300
pF
Reverse-Transfer Capacitance
C
RSS
-
-
200
pF
Thermal Resistance Junction to Case
R
θ
JC
RFM7N35, RFM7N40
-
-
1.25
o
C/W
RFP7N35, RFP7N40
-
-
1.67
o
C/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage (Note 2)
V
SD
t
rr
I
SD
= 7A
I
SD
= 7A, dI
SD
/dt = 100A/
μ
s
-
-
1.4
V
Reverse Recovery Time
-
870
-
ns
NOTES:
2. Pulse Test: Pulse Width
≤
300
μ
s, duty cycle
≤
2%.
3. Repetitive rating: pulse width limited by maximum junction temperature.
RFM7N35, RFM7N40, RFP7N35, RFP7N40
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| RFP7N40 | 7A, 350V and 400V, 0.75 Ohm, N-Channel Power MOSFETs |
| RFM7N35 | 7A, 350V and 400V, 0.75 Ohm, N-Channel Power MOSFETs |
| RFP10N15 | 10A, 150V, 0.300 Ohm, N-Channel Power MOSFETs |
| RFP10P03L | 10A, 30V, 0.200 Ohm, Logic Level, P-Channel Power MOSFET(10A, 30V, 0.200 Ω,P溝道功率MOS場(chǎng)效應(yīng)管) |
| RFD10P03L | 10A, 30V, 0.200 Ohm, Logic Level, P-Channel Power MOSFET(10A, 30V, 0.200 Ω,P溝道功率MOS場(chǎng)效應(yīng)管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RFP7N40 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| RFP-800-100R | 制造商:ANAREN 制造商全稱:Anaren Microwave 功能描述:Flanged Resistors 400 Watts, 100 ohm |
| RFP-800-100R-S | 制造商:ANAREN 制造商全稱:Anaren Microwave 功能描述:Flanged Resistor 800 Watts, 100 |
| RFP-800-100T | 制造商:ANAREN 制造商全稱:Anaren Microwave 功能描述:Flanged Termination |
| RFP-800-50R-S | 制造商:ANAREN 制造商全稱:Anaren Microwave 功能描述:Flanged Resistor 800 Watts, 50ohm |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。