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參數(shù)資料
| 型號： | RFP50N05L |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 50A, 50V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs |
| 中文描述： | 50 A, 50 V, 0.027 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 51K |
| 代理商： | RFP50N05L |
6-214
Typical Performance Curves
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
FIGURE 4. UNCLAMPED INDUCTIVE SWITCHING SAFE
OPERATING AREA
FIGURE 5. SATURATION CHARACTERISTICS
FIGURE 6. TRANSFER CHARACTERISTICS
1.2
1.0
0.8
0.6
0.4
0.2
0
P
0
25
50
75
100
125
150
T
C
, CASE TEMPERATURE (
o
C)
50
40
30
20
10
0
25
50
75
100
125
150
T
C
, CASE TEMPERATURE (
o
C)
I
D
,
100
10
1
0.1
1
10
100
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
T
C
= 25
o
C
OPERATION IN THIS
AREA LIMITED
BY r
DS(ON)
I
D
MAX CONTINUOUS
DC OPERATION
T
J
= MAX RATED
1000
100
10
I
A
,
IF R = 0
t
AV
= (L) (I
AS
) / (1.3 RATED BV
DSS
- V
DD
)
IF R = 0
T
AV
= (L/R) IN [(I
AS
*R) / (1.3 RATED BV
DSS
- V
DD
) + 1]
0.01
0.1
1
10
t
AV
, TIME IN AVALANCHE (ms)
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
I
DM
140
120
100
80
60
40
20
0
I
D
,
0
1.5
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
3.0
4.5
6.0
7.5
V
GS
= 10V
V
GS
= 4V
V
GS
= 3V
V
GS
= 2V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX.
T
C
- 25
o
C
V
GS
= 5V
0
1.5
V
GS
, GATE TO SOURCE VOLTAGE (V)
3.0
4.5
6.0
7.5
140
120
100
80
60
40
20
0
150
o
C
-55
o
C
25
o
C
V
DS
= 15V
I
D
,
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX.
T
C
- 25
o
C
RFG50N05L, RFP50N05L
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PDF描述 |
|---|---|
| RFP50N05L | 50A, 50V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs |
| RFG50N05L | 50A, 50V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs |
| RFG50N05 | 50A, 50V, 0.022 Ohm, N-Channel Power MOSFETs |
| RFP50N05 | 50A, 50V, 0.022 Ohm, N-Channel Power MOSFETs |
| RFP50N06 | 50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RFP50N05L_04 | 制造商:AUSTIN 制造商全稱:Austin Semiconductor 功能描述:50A, 50V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs |
| RFP50N05L_Q | 功能描述:MOSFET 50V/50a/0.022Ohm NCh Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RFP50N06 | 功能描述:MOSFET TO-220AB N-CH POWER RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RFP50N06 | 制造商:Intersil Corporation 功能描述:MOSFET N TO-220 |
| RFP50N06_F102 | 制造商:Fairchild Semiconductor Corporation 功能描述: |
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