參數(shù)資料
型號： RFP50N05L
廠商： HARRIS SEMICONDUCTOR
元件分類： JFETs
英文描述： 50A, 50V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs
中文描述： 50 A, 50 V, 0.027 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件頁數(shù)： 2/6頁
文件大?。?/td> 51K
代理商： RFP50N05L
6-213
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
RFG50N05L
RFP50N05L
UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DS
Drain to Gate Voltage (R
GS
= 20k
)
(Note 1) . . . . . . . . . . . . . . . . . . . . . . . .V
DGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Above T
C
= 25
o
C, Derate Linearly. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulse Avalanche Energy Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
50
50
V
50
50
V
50
130
50
130
A
A
±
10
±
10
V
110
0.88
110
0.88
W
W/
o
C
Refer to UIS SOA Curve
-
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . .T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . .T
pkg
-55 to 150
-55 to 150
o
C
300
260
300
260
o
C
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= 250
μ
A, V
GS
= 0V (Figure 10)
50
-
-
V
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
μ
A (Figure 9)
1
-
2
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= Rated BV
DSS
, V
GS
= 0
V
DS
= 0.8 x Rated BV
DSS
, V
GS
= 0, T
C
= 150
o
C
-
-
25
μ
A
-
-
250
μ
A
Gate to Source Leakage Current
I
GSS
V
GS
=
±
10V, V
DS
= 0V
-
-
±
100
nA
Drain to Source On Resistance (Note 2)
r
DS(ON)
I
D
= 50A, V
GS
= 5V (Figure 7)
-
-
0.022
I
D
= 50A, V
GS
= 4V
-
-
0.027
Turn-On Time
t
(ON)
V
GS
= 5V, R
GS
= 2.5
, R
L
= 1
(Figures 12, 15, 16)
-
-
100
ns
Turn-On Delay Time
t
D(ON)
-
15
-
ns
Rise Time
t
r
-
50
-
ns
Turn-Off Delay Time
t
D(OFF)
-
50
-
ns
Fall Time
t
f
-
15
-
ns
Turn-Off Time
t
(OFF)
-
-
100
ns
Total Gate Charge
Q
G(TOT)
V
GS
= 0 to 10V
V
DD
= 40V, I
D
= 50A
R
L
= 0.8
(Figures 17, 18)
-
-
140
nC
Gate Charge at 5V
Q
G(5)
V
GS
= 0 to 5V
-
-
80
nC
Threshold Gate Charge
Q
G(th
)
V
GS
= 0 to 1V
-
-
6
nC
Thermal Resistance Junction to Case
R
θ
JC
-
-
1.14
o
C/W
Thermal Resistance Junction to Ambient
R
θ
JA
-
-
80
o
C/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage (Note 2)
V
SD
I
SD
= 50A
-
-
1.5
V
Diode Reverse Recovery Time
t
rr
I
SD
= 50A, dI
SD
/dt = 100A/
μ
s
-
-
1.25
ns
NOTES:
2. Pulsed: pulse duration = 300
μ
s maximum, duty cycle = 2%.
3. Repititive rating: pulse width limited by maximum junction temperature.
RFG50N05L, RFP50N05L
相關(guān)PDF資料
PDF描述
RFP50N05L 50A, 50V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs
RFG50N05L 50A, 50V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs
RFG50N05 50A, 50V, 0.022 Ohm, N-Channel Power MOSFETs
RFP50N05 50A, 50V, 0.022 Ohm, N-Channel Power MOSFETs
RFP50N06 50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
RFP50N05L_04 制造商:AUSTIN 制造商全稱:Austin Semiconductor 功能描述:50A, 50V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs
RFP50N05L_Q 功能描述:MOSFET 50V/50a/0.022Ohm NCh Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
RFP50N06 功能描述:MOSFET TO-220AB N-CH POWER RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
RFP50N06 制造商:Intersil Corporation 功能描述:MOSFET N TO-220
RFP50N06_F102 制造商:Fairchild Semiconductor Corporation 功能描述:
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*