參數(shù)資料
型號(hào): RFP4N06
廠(chǎng)商: HARRIS SEMICONDUCTOR
元件分類(lèi): JFETs
英文描述: 4A, 50V and 60V, 0.800 Ohm, N-Channel Power MOSFETs
中文描述: 4 A, 60 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件頁(yè)數(shù): 3/5頁(yè)
文件大?。?/td> 40K
代理商: RFP4N06
4-525
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
FIGURE 4. SATURATION CHARACTERISTICS
FIGURE 5. TRANSFER CHARACTERISTICS
FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs DRAIN
CURRENT
1.2
1.0
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125
150
T
C
, CASE TEMPERATURE (
o
C)
P
25
50
75
100
125
150
T
C
, CASE TEMPERATURE (
o
C)
I
D
,
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
4.5
1
0.10
0.01
10
10
100
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
1
OPERATION IN THIS AREA
MAY BE LIMITED BY r
DS(ON)
R
R
T
J
= MAX RATED
T
C
= 25
C
12
10
8
0
0
1
2
3
4
5
6
7
I
D
,
V
DS,
DRAIN TO SOURCE VOLTAGE (V)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
T
C
= 25
o
C
2
4
6
V
GS
= 5V
V
GS
= 6V
V
GS
= 7V
V
GS
= 8V
V
GS
= 9V
V
GS
= 10V
V
GS
= 20V
V
DS
= 10V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
I
D
,
3
2
1
0
2
4
6
8
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
4
-40
o
C
125
o
C
0
25
o
C
r
D
,
I
D,
DRAIN CURRENT (A)
0.8
0.6
0.4
0.2
0
0
2
4
R
)
1.0
5
1.2
1.4
V
GS
= 10V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
1
3
1.6
125
o
C
25
o
C
-40
o
C
RFP4N05, RFP4N06
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