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參數(shù)資料
| 型號(hào)： | RFM4N40 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 4A, 350V and 400V, 2.000 Ohm, N-Channel Power MOSFETs |
| 中文描述： | 4 A, 400 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大小： | 38K |
| 代理商： | RFM4N40 |
Semiconductor
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-800-4-HARRIS
|
Copyright
Harris Corporation 1998
RFM4N35, RFM4N40, RFP4N35, RFP4N40
4A, 350V and 400V 2.000 Ohm, N-Channel
Power MOSFETs
These are N-channel enhancement-mode silicon-gate
power field effect transistors designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate-drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA17404.
Features
4A, 350V and 400V
r
DS(ON)
= 2.000
Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
JEDEC TO-204AA
JEDEC TO-220AB
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFM4N35
TO-204AA
RFM4N35
RFM4N40
TO-204AA
RFM4N40
RFP4N35
TO-220AB
RFP4N35
RFP4N40
TO-220AB
RFP4N40
NOTE: When ordering, use the entire part number.
D
G
S
DRAIN
(FLANGE)
SOURCE (PIN 2)
GATE (PIN 1)
DRAIN
(FLANGE)
GATE
SODRAIN
Data Sheet
October 1998
File Number
1491.3
pdf-
mark
Ohm, N-
Channel
conduc-
tor, N-
Channel
Power
MOS-
FETs,
TO-
204AA,
TO-
220AB)
/Creator
()
[
Power
MOS-
FETs)
/Author
()
/Key-
words
(Harris
Semi-
[ /Title
()
/Sub-
ject ()
/Autho
r ()
/Key-
words
()
/Cre-
ator ()
/DOCI
NFO
400V,
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