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參數(shù)資料
| 型號： | RFP2N20 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 2A, 200V, 3.500 Ohm, N-Channel Power MOSFET |
| 中文描述： | 2 A, 200 V, 3.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁數(shù)： | 4/5頁 |
| 文件大?。?/td> | 40K |
| 代理商： | RFP2N20 |
4-521
FIGURE 7. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Intersil Applications Notes AN7254 and AN7260
FIGURE 10. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT
Test Circuits and Waveforms
FIGURE 11. SWITCHING TIME TEST CIRCUIT
FIGURE 12. RESISTIVE SWITCHING WAVEFORMS
Typical Performance Curves
Unless Otherwise Specified
(Continued)
1.5
1
0.5
-50
0
50
100
150
T
J
, JUNCTION TEMPERATURE (
o
C)
I
D
= 2A, V
GS
= 10V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
N
O
2
0
1.2
1.0
1.4
50
0
T
J
, JUNCTION TEMPERATURE (
o
C)
50
100
150
N
T
V
GS
= V
DS
I
D
= 250
μ
A
200
0
0.8
0
10
V
DS,
DRAIN TO SOURCE VOLTAGE (V)
20
30
40
50
C
140
100
60
20
0
180
C
RSS
C
OSS
C
ISS
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
≈
C
DS
+ C
GD
200
150
100
50
0
10
8
6
4
0
2
GATE
SOURCE
VOLTAGE
I
G(REF)
I
G(ACT)
0.75 BV
DSS
0.50 BV
DSS
0.25 BV
DSS
V
DD
= BV
DSS
V
DD
= BV
DSS
R
L
= 100
I
G(REF)
= 0.09
μ
A
V
GS
= 10V
DRAIN SOURCE
VOLTAGE
V
G
,
V
D
,
t, TIME (
μ
s)
20
80
I
G(REF)
I
G(ACT)
V
GS
R
L
R
G
DUT
+
-
V
DD
t
ON
t
d(ON)
t
r
90%
10%
V
DS
90%
10%
t
f
t
d(OFF)
t
OFF
90%
50%
50%
10%
PULSE WIDTH
V
GS
0
0
RFP2N20
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RFP2N20L | 功能描述:MOSFET TO-220 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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| RFP-30-100R | 制造商:ANAREN 制造商全稱:Anaren Microwave 功能描述:Flangeless Resistors |
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