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參數(shù)資料
| 型號： | RFP2N20 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 2A, 200V, 3.500 Ohm, N-Channel Power MOSFET |
| 中文描述： | 2 A, 200 V, 3.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁數(shù)： | 3/5頁 |
| 文件大?。?/td> | 40K |
| 代理商： | RFP2N20 |
4-520
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
FIGURE 4. SATURATION CHARACTERISTICS
FIGURE 5. TRANSFER CHARACTERISTICS
FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs DRAIN
CURRENT
1.2
1.0
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125
150
T
C
, CASE TEMPERATURE (
o
C)
P
0
25
50
75
100
125
150
T
C
, CASE TEMPERATURE (
o
C)
I
D
,
2.5
1.5
1.0
0.5
2.0
1
0.10
0.01
10
10
100
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
1
OPERATION IN THIS AREA
MAY BE LIMITED BY r
DS(ON)
1000
T
J
= MAX RATED
SINGLE PULSE
T
C
= 25
C
3
2.5
2
0
0
1
2
3
4
5
6
7
I
D
,
V
DS,
DRAIN TO SOURCE VOLTAGE (V)
0.5
1
1.5
V
GS
= 4V
V
GS
= 5V
V
GS
= 6V
V
GS
= 7V
V
GS
= 20V
V
GS
= 10V
V
GS
= 8V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
T
C
= 25
C
25
o
C
I
D
,
1.5
1
0.5
0
2
V
GS
, GATE TO SOURCE VOLTAGE (V)
4
6
8
10
2
0
2.5
3
V
DS
= 15V
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80
μ
s
125
o
C
125
o
C
-40
o
C
25
o
C
-40
o
C
r
D
,
I
D,
DRAIN CURRENT (A)
3
2
1
0
0
1
2
R
)
4
5
6
0.5
1.5
V
GS
= 10V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
2.5
25
o
C
125
o
C
-40
o
C
RFP2N20
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RFP2N20L | 功能描述:MOSFET TO-220 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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| RFP2P10 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RFP-30-100R | 制造商:ANAREN 制造商全稱:Anaren Microwave 功能描述:Flangeless Resistors |
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