參數(shù)資料
型號(hào)： RFP2N15
廠商： HARRIS SEMICONDUCTOR
元件分類： JFETs
英文描述： 2A, 120V and 150V, 1.750 Ohm, N-Channel Power MOSFETs
中文描述： 2 A, 150 V, 1.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件頁(yè)數(shù)： 2/5頁(yè)
文件大小： 35K
代理商： RFP2N15
5-2
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
RFP2N12
120
120
2
5
±
20
25
0.2
-55 to 150
RFP2N15
150
150
2
5
±
20
25
0.2
-55 to 150
UNITS
V
V
A
A
V
W
W/
o
C
o
C
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DS
Drain to Gate Voltage (R
GS
= 20k
) (Note 1) . . . . . . . . . . . . . . . . . . . . .V
DGR
Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . .T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . .T
pkg
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
300
260
300
260
o
C
o
C
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
RFP2N12
BV
DSS
I
D
= 250
μ
A, V
GS
= 0V
120
-
-
V
RFP2N15
150
-
-
V
Gate Threshold Voltage
V
GS(TH)
I
DSS
V
GS
= V
DS
, I
D
= 250
μ
A, (Figure 8)
V
DS
= Rated BV
DSS
, V
GS
= 0V
V
DS
= 0.8 x Rated BV
DSS
, V
GS
=
0V, T
C
= 125
o
C
V
GS
=
±
20V, V
DS
= 0V
I
D
= 2A, V
GS
= 10V(Figures 6, 7)
I
D
= 2A, V
GS
= 10V
I
D
≈
1A, V
DD
= 75V, R
G
= 50
,
R
L
= 73
, V
GS
= 10V
(Figures 10, 11, 12)
2
-
4
V
Zero-Gate Voltage Drain Current
-
-
1
μ
A
μ
A
-
-
25
Gate to Source Leakage Current
I
GSS
r
DS(ON)
V
DS(ON)
t
d(ON)
t
r
t
d(OFF)
t
f
C
ISS
C
OSS
C
RSS
R
θ
JC
-
-
±
100
nA
Drain to Source On Resistance (Note 2)
-
-
1.750
Drain to Source On Voltage
-
-
3.5
V
Turn-On Delay Time
-
17
25
ns
Rise Time
-
30
45
ns
Turn-Off Delay Time
-
30
45
ns
Fall Time
-
17
25
ns
Input Capacitance
V
GS
= 0V, V
DS
= 25V
f = 1MHz, (Figure 9)
-
-
200
pF
Output Capacitance
-
-
80
pF
Reverse-Transfer Capacitance
-
-
25
pF
Thermal Resistance Junction to Case
-
-
5
o
C/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage (Note 2)
V
SD
I
SD
= -1A
-
-
1.4
V
Diode Reverse Recovery Time
t
rr
I
SD
= 2A, dl
SD
/dt = 50A/
μ
s
-
150
-
ns
NOTES:
2. Pulsed test: Pulse width
≤
300
μ
s duty cycle
≤
2%.
3. Repetitive rating: pulse width limited by maximum junction temperature.
RFP2N12, RFP2N15
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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