參數(shù)資料
型號(hào): RFP2N12L
廠商: HARRIS SEMICONDUCTOR
元件分類: JFETs
英文描述: 2A, 120V, 1.750 Ohm, Logic Level,N-Channel Power MOSFET(2A, 120V,1.750 Ω, N溝道,邏輯電平,功率MOS場(chǎng)效應(yīng)管)
中文描述: 2 A, 120 V, 1.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件頁(yè)數(shù): 3/5頁(yè)
文件大?。?/td> 35K
代理商: RFP2N12L
6-254
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
FIGURE 4. SATURATION CHARACTERISTICS
FIGURE 5. TRANSFER CHARACTERISTICS
FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs DRAIN
CURRENT
1.2
1.0
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125
150
T
C
, CASE TEMPERATURE (
o
C)
P
0
25
50
75
100
125
150
T
C
, CASE TEMPERATURE (
o
C)
I
D
,
2.5
1.5
1.0
0.5
2.0
1
0.10
0.01
10
10
100
1000
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
1
OPERATION IN THIS AREA
LIMITED BY r
DS(ON)
T
J
= MAX RATED
T
C
= 25
C
4
3
2
1
0
1
2
3
4
5
6
7
I
D
,
V
DS,
DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 3V
V
GS
= 4V
V
GS
= 5V
V
GS
= 2V
PULSE DURATION = 80
μ
s
T
C
= 25
o
C
V
GS
= 10V
8
9
10
-40
o
C
25
o
C
125
o
C
V
DS
= 15V
PULSE DURATION = 80
μ
s
I
D
,
3
2
1
0
1
2
3
4
5
V
GS
, GATE TO SOURCE VOLTAGE (V)
4
125
o
C
-40
o
C
5
6
125
o
C
25
o
C
-40
o
C
V
GS
= 5V
PULSE DURATION = 80
μ
s
r
D
,
I
D,
DRAIN CURRENT (A)
4
3
2
1
0.50
1
2
3
4
R
)
RFP2N12L
相關(guān)PDF資料
PDF描述
RFP2N12 2A, 120V and 150V, 1.750 Ohm, N-Channel Power MOSFETs
RFP2N15 2A, 120V and 150V, 1.750 Ohm, N-Channel Power MOSFETs
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
RFP2N15 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:RCA 功能描述:MOSFET 制造商:Harris Corporation 功能描述:
RFP2N15L 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 2A I(D) | TO-220AB
RFP2N18 制造商:Harris Corporation 功能描述:
RFP2N18L 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 180V V(BR)DSS | 2A I(D) | TO-220AB
RFP2N20 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: