參數(shù)資料
型號(hào)： RFP15N08L
廠商： HARRIS SEMICONDUCTOR
元件分類： JFETs
英文描述： 15A, 80V, 0.140 Ohm, Logic Level,N-Channel Power MOSFET(15A, 60V, 0.140 Ω, N溝道,邏輯電平,功率MOS場(chǎng)效應(yīng)管)
中文描述： 15 A, 80 V, 0.14 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件頁(yè)數(shù)： 2/5頁(yè)
文件大?。?/td> 40K
代理商： RFP15N08L
6-235
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
RFP15N08L
UNITS
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DS
Drain to Gate Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GS
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
D
Derated above 25
o
C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
80
V
80
V
±1
0
V
15
A
40
A
72
0.48
W
W/
o
C
o
C
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
J,
T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
-55 to 175
300
260
o
C
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 150
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= 1mA, V
GS
= 0V
80
-
-
V
Gate to Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 1mA
T
C
= 25
o
C, V
DS
= 65V, V
GS
= 0V
T
C
= 125
o
C, V
DS
= 65V, V
GS
= 0V
1
-
2.5
V
Zero Gate Voltage Drain Current
I
DSS
-
-
1
μ
A
-
-
50
μ
A
Gate to Source Leakage Current
I
GSS
V
GS
= 10V, V
DS
= 0V
-
-
100
nA
Drain to Source On Voltage
V
DS(ON)
I
D
= 7.5A, V
GS
= 5V
-
-
1.05
V
I
D
= 15A, V
GS
= 5V
-
-
3.0
V
Drain to Source On Resistance (Note 2)
r
DS(ON)
I
D
= 7.5A, V
GS
= 5V
-
-
0.140
Forward Transconductance
V
(plateau)
V
DS
= 15V, I
D
= 15A
-
-
4.5
V
Turn-On Delay Time
t
d(ON)
V
DD
= 40V, I
D
= 7.5A, R
GS
= 6.25
,
V
GS
= 5V
-
-
40
ns
Rise Time
t
r
-
-
325
ns
Turn-Off Delay Time
t
d(OFF)
-
-
325
ns
Fall Time
t
f
-
-
325
ns
Total Gate Charge
(Gate to Source + Gate to Drain)
Q
g(TOT)
V
GS
= 0-10V
V
DD
= 64V,
I
D
= 15A,
R
L
= 4.27
-
-
80
nC
Gate Charge at 5V
Q
g(5)
V
GS
= 0-5V
-
-
45
nC
Threshold Gate Charge
Q
g(TH)
V
GS
= 0-1V
-
-
3
nC
Thermal Resistance Junction to Case
R
θ
JC
-
-
2.083
o
C/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage
V
SD
I
SD
= 7.5A
-
-
1.4
V
Diode Reverse Recovery Time
t
rr
I
SD
= 4A, dI
SD
/dt = 100A/
μ
s
-
225
-
ns
NOTES:
2. Pulsed: pulse duration =
≤
300
μ
s maximum, duty cycle =
≤
2%.
3. Repititive rating: pulse width limited by maximum junction temperature.
RFP15N08L
相關(guān)PDF資料
PDF描述
RFP15N15 15A, 150V, 0.150 Ohm, N-Channel Power MOSFETs
RFP15P05 15A, 50V, 0.150 Ohm, P-Channel Power MOSFETs
RFP15P06 15A, 60V, 0.150 Ohm, P-Channel Power MOSFETs
RFP15N05 15A, 50V and 60V, 0.140 Ohm, Logic Level N-Channel Power MOSFETs
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RFP15P06 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:15A, 60V, 0.150 Ohm, P-Channel Power MOSFETs
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