- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄374588 > RFP12P10 (INTERSIL CORP) 12A, 80V and 100V, 0.300 Ohm, P-Channel Power MOSFETs(12A, 80V 和 100V, 0.300 Ω, P溝道增強(qiáng)模式功率MOS場效應(yīng)管) PDF資料下載
參數(shù)資料
| 型號(hào)： | RFP12P10 |
| 廠商： | INTERSIL CORP |
| 元件分類： | JFETs |
| 英文描述： | 12A, 80V and 100V, 0.300 Ohm, P-Channel Power MOSFETs(12A, 80V 和 100V, 0.300 Ω, P溝道增強(qiáng)模式功率MOS場效應(yīng)管) |
| 中文描述： | 12 A, 100 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁數(shù)： | 4/5頁 |
| 文件大小： | 37K |
| 代理商： | RFP12P10 |
4-164
FIGURE 7. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Intersil Application Notes AN7254 and AN7260
FIGURE 10. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT
Test Circuits and Waveforms
FIGURE 11. SWITCHING TIME TEST CIRCUIT
FIGURE 12. RESISTIVE SWITCHING WAVEFORMS
Typical Performance Curves
(Continued)
1.5
1.0
0.5
-50
0
50
100
150
T
J,
JUNCTION TEMPERATURE (
o
C)
N
2.0
O
0
I
D
= 12A, V
GS
= -10V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
1.2
1.0
-50
0
50
100
T
J,
JUNCTION TEMPERATURE (
o
C)
N
0.9
0.8
0.7
1.1
1.3
150
V
DS
= V
GS
I
D
= 250
μ
A
T
0.6
0
10
V
DS,
DRAIN TO SOURCE VOLTAGE (V)
20
30
40
50
C
P
F
2000
1600
400
800
0
2400
C
ISS
C
OSS
C
RSS
1200
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
≈
C
DS
+ C
GD
0.75BV
DSS
0.75BV
DSS
0.50BV
DSS
0.50BV
DSS
0.25BV
DSS
0.25BV
DSS
GATE
SOURCE
VOLTAGE
R
L
= 8.3
I
G(REF)
= 0.92mA
V
GS
= -10V
V
DD
= BV
DSS
V
DD
= BV
DSS
I
G(REF)
I
G(ACT)
20
80
DRAIN SOURCE
VOLTAGE
I
G(REF)
I
G(ACT)
V
D
,
t, TIME (
μ
s)
V
G
,
100
75
50
25
0
10
8
6
4
0
2
V
GS
R
L
R
G
DUT
+
-
V
DD
t
d(ON)
t
r
90%
10%
V
DS
90%
t
f
t
d(OFF)
t
OFF
90%
50%
50%
10%
PULSE WIDTH
V
GS
0
t
ON
10%
0
RFP12P08, RFP12P10
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| RFP14N06L | 14A, 60V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs |
| RFP14N06 | COMPACT CAT5 AUDIO/VIDEO SPLITTER - 2 CHANNEL |
| RFP14N05 | MULTI DVI W/ SAP DC REC-MM -FIBER - MM FIBER |
| RFP150N | 44A, 100V, 0.030 Ohm, N-Channel Power MOSFET |
| RFP15N05L | 15A, 50V and 60V, 0.140 Ohm, Logic Level N-Channel Power MOSFETs(15A, 50V and 60V, 0.140 Ω,邏輯電平N溝道功率MOS場效應(yīng)管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RFP14N05 | 功能描述:MOSFET TO-220AB N-Ch Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RFP14N05L | 功能描述:MOSFET TO-220AB N-Ch Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RFP14N05L | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| RFP14N05L_Q | 功能描述:MOSFET TO-220AB N-Ch Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RFP14N05LR4615 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。