參數(shù)資料
型號： RFP12N20
廠商： HARRIS SEMICONDUCTOR
元件分類： JFETs
英文描述： 12A, 180V and 200V, 0.250 Ohm, N-Channel Power MOSFETs
中文描述： 12 A, 200 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
文件頁數(shù)： 2/5頁
文件大?。?/td> 43K
代理商： RFP12N20
2
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
RFM12N08
80
80
12
30
±
20
75
0.6
-55 to 150
RFM12N10
100
100
12
30
±
20
75
0.6
-55 to 150
RFP12N08
80
80
12
30
±
20
60
0.48
-55 to 150
RFP12N10
100
100
12
30
±
20
60
0.48
-55 to 150
UNITS
V
V
A
A
V
W
W/
o
C
o
C
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . V
DSS
Drain to Gate Voltage (R
GS
= 20k
)
(Note 1). . . . . . . . . . . . . V
DGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . .I
DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Linear Derating Factor. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . .T
J,
T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . .T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . T
pkg
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
300
260
300
260
300
260
300
260
o
C
o
C
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
RFM12N08, RFP12N08
BV
DSS
I
D
= 250
μ
A, V
GS
= 0V
80
-
-
V
RFM12N10, EFP12N10
100
-
-
V
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
μ
A (Figure 8)
2
-
4
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= Rated BV
DSS,
V
GS
= 0V
V
DS
= 0.8 x Rated BV
DSS,
T
C
= 125
o
C
-
-
1
μ
A
-
-
25
μ
A
Gate to Source Leakage Current
I
GSS
V
GS
=
±
20V, V
DS
= 0V
-
-
±
100
nA
Drain to Source On Resistance (Note 2)
r
DS(ON)
I
D
= 12A, V
GS
= 10V (Figures 6, 7)
-
-
0.200
Drain to Source On Voltage (Note 2)
V
DS(ON)
I
D
= 12A, V
GS
= 10V
-
-
2.4
V
Turn-On Delay Time
t
d(ON)
V
DD
= 50V, I
D
= 6A, R
G
= 50
,
V
GS
= 10V, R
L
= 8
,
(Figures 10, 11, 12)
-
45
70
ns
Rise Time
t
r
-
250
375
ns
Turn-Off Delay Time
t
d(OFF)
-
85
130
ns
Fall Time
t
f
-
100
150
ns
Input Capacitance
C
ISS
V
DS
= 25V, V
GS
= 0V, f = 1MHz
(Figure 9)
-
-
850
pF
Output Capacitance
C
OSS
-
-
300
pF
Reverse Transfer Capacitance
C
RSS
-
-
150
pF
Thermal Resistance Junction to Case
R
θ
JC
RFM12N08, RFM12N10
-
-
1.67
o
C/W
RFP12N08, RFP12N10
-
-
2.083
o
C/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Voltage (Note 2)
V
SD
I
SD
= 6A
-
-
1.4
V
Reverse Recovery Time
t
rr
I
SD
= 4A, dI
SD
/dt = 100A/
μ
s
-
150
-
ns
NOTE:
2. Pulse test: Pulse width
≤
300
μ
s, duty cycle
≤
2%.
3. Repetitive rating: pulse width is limited by maximum junction temperature.
RFM12N08, RFM12N10, RFP12N08, RFP12N10
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