參數(shù)資料
型號(hào): RFP10P15
廠(chǎng)商: HARRIS SEMICONDUCTOR
元件分類(lèi): JFETs
英文描述: P-Channel Power MOSFET(P溝道增強(qiáng)模式功率MOS場(chǎng)效應(yīng)管)
中文描述: 10 A, 150 V, 0.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件頁(yè)數(shù): 3/5頁(yè)
文件大?。?/td> 305K
代理商: RFP10P15
3
Typical Performance Curves
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
FIGURE 4. SATURATION CHARACTERISTICS
FIGURE 5. TRANSFER CHARACTERISTICS
FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs DRAIN
CURRENT
0
50
100
150
0
T
C
, CASE TEMPERATURE (
o
C)
P
0.2
0.4
0.6
0.8
1.0
1.2
25
50
75
100
125
150
T
C
, CASE TEMPERATURE (
o
C)
I
D
,
-8
-7
-6
-5
-4
-3
-2
-1
0
-12
-11
-10
-9
RFM10P12, RFM10P15
RFP10P12, RFP10P15
100
10
1
0.1-1
-10
-100
-1000
I
D
,
OPERATION IN THIS AREA
LIMITED BY r
DS(ON)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
DC
RFM10P12, RFP10P12
RFM10P15, RFP10P15
I
D
MAX CONTINUOUS
T
J
= MAX RATED
T
C
= 25
C
24
16
8
0
-2
-4
I
D
D
V
DS,
DRAIN TO SOURCE VOLTAGE (V)
PULSE DURATION = 80
μ
s
T
C
= 25
o
C
V
GS
= -20V
-6
-8
-10
V
GS
= -8V
V
GS
= -7V
V
GS
= -6V
V
GS
= -5V
V
GS
= -10V
32
28
20
12
4
0
-1
-3
-5
-7
-9
I
D
O
12
8
4
0
-2
-4
-6
-7
V
GS,
GATE TO SOURCE VOLTAGE (V)
0
V
DS
= -10V
PULSE DURATION = 80
μ
s
125
o
C
-40
o
C
125
o
C
25
o
C
-40
o
C
10
-3
-5
-8
6
2
-1
14
r
D
D
I
D,
DRAIN CURRENT (A)
0.6
0.4
0.2
0
0
2
8
12
20
R
)
4
6
10
14
V
GS
= -10V
PULSE DURATION = 80
μ
s
25
o
C
-40
o
C
125
o
C
18
16
0.5
0.3
0.1
0.7
0.8
RFP10P15
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