參數(shù)資料
型號： RFP10N15
廠商： HARRIS SEMICONDUCTOR
元件分類： JFETs
英文描述： 10A, 150V, 0.300 Ohm, N-Channel Power MOSFETs
中文描述： 10 A, 150 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
文件頁數(shù)： 2/5頁
文件大小： 40K
代理商： RFP10N15
2
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
RFP10N15
UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DS
Drain to Gate Voltage (R
GS
= 20k
)
(Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
150
V
150
V
10
A
25
A
±
20
V
60
W
0.48
W/
o
C
o
C
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
pkg
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
-55 to 150
300
260
o
C
o
C
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= 250
μ
A, V
GS
= 0
150
-
-
V
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
μ
A, (Figure 8)
2
-
4
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= Rated BV
DSS
, V
GS
= 0V
-
-
1
μ
A
V
DS
= 0.8 x Rated BV
DSS
, TC = 125
o
C
-
-
25
mA
Gate to Source Leakage Current
I
GSS
V
GS
=
±
20V, V
DS
= 0
-
-
±
100
nA
Drain to Source On Resistance(Note 2)
r
DS(ON)
I
D
= 10A, V
GS
= 10V, (Figures 6, 7)
-
-
0.300
Drain to Source On Voltage (Note 2)
V
DS(ON)
I
D
= 10A, V
GS
= 10V
-
-
3.0
V
Turn-On Delay Time
t
d(ON)
I
D
≈
5A, V
DD
= 75V, R
G
=
50
,
V
GS
= 10V, R
L
= 14.7
(Figures 10, 11, 12)
-
40
60
ns
Rise Time
t
r
-
165
250
ns
Turn-Off Delay Time
t
d(OFF)
-
90
135
ns
Fall Time
t
f
-
90
135
ns
Input Capacitance
C
ISS
V
GS
= 0V, V
DS
= 25V,
f = 1MHz, (Figure 9)
-
-
850
pF
Output Capacitance
C
OSS
-
-
230
pF
Reverse Transfer Capacitance
C
RSS
-
-
100
pF
Thermal Resistance Junction to Case
RFP10N15
-
-
2.083
o
C/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage (Note 2)
V
SD
I
SD
= 5A
-
-
1.4
V
Diode Reverse Recovery Time
t
rr
I
SD
= 4A, dI
SD
/dt = 100A/
μ
s
-
200
-
ns
NOTES:
2. Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%
3. Repetitive rating: pulse width is limited by maximum junction temperature.
RFP10N15
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