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參數(shù)資料
| 型號： | RFL2N05 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 2A, 50V and 60V, 0.95 Ohm, N-Channel Power MOSFETs |
| 中文描述： | 2000 mA, 50 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-205AF |
| 文件頁數(shù)： | 4/5頁 |
| 文件大?。?/td> | 44K |
| 代理商： | RFL2N05 |
5-4
FIGURE 7. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
FIGURE 10. FORWARD TRANSCONDUCTANCE vs DRAIN
CURRENT
NOTE: Refer to Harris Application Notes AN7254 and AN7260.
FIGURE 11. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT
Typical Performance Curves
Unless Otherwise Specified
(Continued)
1.5
1.0
0.5
-50
0
T
J
, JUNCTION TEMPERATURE (
o
C)
50
100
150
200
V
GS
= 10V
I
D
= 1A
N
O
2.0
0
1.5
1.0
0.5
50
0
50
100
150
T
J
, JUNCTION TEMPERATURE (
o
C)
V
GS
= V
DS
I
D
= 250
μ
A
N
T
0
0
10
20
30
40
50
60
70
C
P
F
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
240
200
160
120
80
40
f = 1MHz
C
ISS
C
OSS
C
RSS
0
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
≈
C
DS
+ C
GS
0
0.5
1
1.5
2
2.5
3
g
f
,
I
D
, DRAIN CURRENT (A)
1200
1000
800
600
400
200
V
DS
= 10V
80
μ
sPULSE TEST
-40
o
C
25
o
C
125
o
C
0
80
45
30
15
0
10
8
6
4
0
2
GATE
TO
SOURCE
VOLTAGE
R
L
= 15
I
G(REF)
I
G(ACT)
0.75V
DSS
0.50V
DSS
0.25 V
DSS
0.75V
DSS
0.50V
DSS
0.25V
DSS
V
DD
= V
DSS
V
DD
= V
DSS
BV
DSS
I
G(REF)
= 0.095mA
V
GS
= 10V
V
G
,
V
D
,
t, TIME (
μ
s)
20
80
DRAIN TO SOURCE
VOLTAGE
I
G(REF)
I
G(ACT)
RFL2N05, RFL2N06
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| RFL2N05L | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 2A I(D) | TO-39 |
| RFL2N06 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:2A, 50V and 60V, 0.95 Ohm, N-Channel Power MOSFETs |
| RFL2N06L | 制造商:Harris Corporation 功能描述: |
| RFL-3535 | 制造商:RFHIC 制造商全稱:RFHIC 功能描述:LNA Module |
| RFL-3535D | 制造商:RFHIC 制造商全稱:RFHIC 功能描述:LNA Module |
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