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參數(shù)資料
| 型號： | RFL2N05 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 2A, 50V and 60V, 0.95 Ohm, N-Channel Power MOSFETs |
| 中文描述： | 2000 mA, 50 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-205AF |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 44K |
| 代理商： | RFL2N05 |
5-2
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
RFL2N05
50
50
±
20
2
10
8.33
0.0667
-55 to 150
RLF2N06
60
60
±
20
2
10
8.33
0.0667
-55 to 150
UNITS
V
V
V
A
A
W
W/
o
C
o
C
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
Drain to Gate Voltage (R
GS
= 1M
) (Note 1). . . . . . . . . . . . . . . . . . . . . .V
DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Drain Current, RMS Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
DM
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature Range . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . .T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . .T
pkg
300
260
300
260
o
C
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of
the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
RFL2N05
BV
DSS
I
D
= 250
μ
A, V
GS
= 0
50
-
-
V
RFL2N06
60
-
-
V
Gate to Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
μ
A, (Figure 8)
2
-
4
V
Zero-Gate Voltage Drain Current
I
DSS
V
DS
= 0.8 x Rated BV
DSS
,
T
C
= 25
o
C
T
C
= 125
o
C
-
-
1
μ
A
-
-
25
μ
A
Gate to Source Leakage Current
I
GSS
V
GS
=
±
20V, V
DS
= 0
-
-
±
100
nA
Drain to Source On Voltage (Note 2)
V
DS(ON)
I
D
= 1A, V
GS
= 10V
-
-
0.95
V
I
D
= 2A, V
GS
= 10V
-
-
2.0
V
I
D
= 4A, V
GS
= 15V
-
-
4.8
V
Drain to Source On Resistance (Note 2)
r
DS(ON)
I
D
= 1A, V
GS
= 10V, (Figures 6, 7)
-
-
0.95
Forward Transconductance (Note 2)
g
fs
I
D
= 1A, V
DS
= 10V, (Figure 10)
I
D
≈
1A, V
DD
= 30V, R
GS
= 50
,
V
GS
= 10V, (Figures 11, 12, 13)
400
-
-
S
Turn-On Delay Time
t
d(ON)
-
6
15
ns
Rise Time
t
r
-
14
30
ns
Turn-Off Delay Time
t
d(OFF)
-
16
30
ns
Fall Time
t
f
-
30
50
ns
Input Capacitance
C
ISS
V
GS
= 0V, V
DS
= 25V,
f = 1MHz, (Figure 9)
-
-
200
pF
Output Capacitance
C
OSS
-
-
85
pF
Reverse-Transfer Capacitance
C
RSS
-
-
30
pF
Thermal Resistance Junction to Case
R
θ
JC
-
-
15
o
C/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage (Note 2)
V
SD
I
SD
= 1A
-
-
1.4
V
Diode Reverse Recovery Time
t
rr
I
SD
= 2A, dI
SD
/dt = 50A/
μ
s
-
100
-
ns
NOTE:
2. Pulse test: pulse width
≤
300
μ
s, duty cycle
≤
2%.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RFL2N05L | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 2A I(D) | TO-39 |
| RFL2N06 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:2A, 50V and 60V, 0.95 Ohm, N-Channel Power MOSFETs |
| RFL2N06L | 制造商:Harris Corporation 功能描述: |
| RFL-3535 | 制造商:RFHIC 制造商全稱:RFHIC 功能描述:LNA Module |
| RFL-3535D | 制造商:RFHIC 制造商全稱:RFHIC 功能描述:LNA Module |
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