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參數(shù)資料
| 型號： | RFL1N20 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1A, 180V and 200V, 3.65 Ohm, N-Channel Power MOSFETs |
| 中文描述： | 1000 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-205AF |
| 文件頁數(shù)： | 4/5頁 |
| 文件大小： | 43K |
| 代理商： | RFL1N20 |
5-4
FIGURE 7. NORMALIZED DRAIN TO SOURCE ON RESISTANCE
vs JUNCTION TEMPERATURE
FIGURE 8. NORMALIZED GATE THRESHOLD vs JUNCTION
TEMPERATURE
FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
FIGURE 10. TRANSCONDUCTANCE vs DRAIN CURRENT
NOTE: Refer to Harris Application Notes AN7254 and AN7260.
FIGURE 11. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT
Typical Performance Curves
Unless Otherwise Specified
(Continued)
N
1.5
1.0
0.5
0
-50
0
50
T
J
, JUNCTION TEMPERATURE (
o
C)
150
2.0
100
V
GS
= 10V, I
D
= 1A
O
1.4
1.2
1.0
0.8
0.6
-50
0
50
100
150
T
J
, JUNCTION TEMPERATURE (
o
C)
N
T
V
GS
= V
DS
, I
D
= 250
μ
A
220
180
140
100
60
20
0
10
20
30
40
50
60
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
f = 1MHz
C
ISS
C
OSS
C
RSS
1000
900
800
700
600
500
400
300
200
100
0
0
0.5
1
1.5
2
2.5
I
D
, DRAIN CURRENT (A)
g
f
,
V
DS
= 15V
250
μ
s PULSE TEST
DUTY CYCLE
≤
2%
T
C
= -40
o
C
T
C
= 25
o
C
T
C
= 125
o
C
200
150
100
50
0
10
8
6
4
2
0
V
G
,
V
D
,
I
G(REF)
I
G(ACT)
20
I
G(REF)
I
G(ACT)
80
t, TIME (
μ
s)
DRAIN TO SOURCE
VOLTAGE
GATE
TO
SOURCE
VOLTAGE
BV
DSS
V
DD
= V
DSS
V
DD
= V
DSS
R
L
= 100
I
G(REF)
= 0.09mA
V
GS
= 10V
0.75V
DSS
0.50V
DSS
0.25V
DSS
RFL1N18, RFL1N20
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