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參數(shù)資料
| 型號(hào)： | RFL1N20 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 1A, 180V and 200V, 3.65 Ohm, N-Channel Power MOSFETs |
| 中文描述： | 1000 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-205AF |
| 文件頁數(shù)： | 3/5頁 |
| 文件大小： | 43K |
| 代理商： | RFL1N20 |
5-3
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs
CASE TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
FIGURE 4. SATURATION CHARACTERISTICS
FIGURE 5. TRANSFER CHARACTERSTICS
FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
1.2
1.0
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125
150
T
C
, CASE TEMPERATURE (
o
C)
P
0
25
50
75
100
125
150
T
C
, CASE TEMPERATURE (
o
C)
I
D
,
1.4
1.2
1.0
0.8
0.6
0.4
0.2
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
100
0.10
10
1
0.01
1000
1.00
10.00
T
C
= 25
o
C
T
J
= MAX RATED
OPERATION IN THIS
AREA LIMITED BY r
DS(ON)
RFL1N18
RFL1N20
2.5
2.0
1.5
1.0
0.5
0
3.0
0
1
2
3
4
5
6
7
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
250
μ
s PULSE TEST
DUTY CYCLE
≤
20%
T
C
= 25
o
C
V
GS
= 20V
V
GS
= 4V
V
GS
= 5V
V
GS
= 6V
V
GS
= 7V
V
GS
= 10V
V
GS
= 8V
2.5
2.0
1.5
1.0
0.5
0
3.0
V
DS
= 15V
250
μ
s PULSE TEST
DUTY CYCLE
≤
2%
0
2
4
6
8
10
12
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
,
T
C
= 125
o
C
T
C
= 125
o
C
T
C
= -40
o
C
T
C
= -40
o
C
T
C
= 25
o
C
6
5
4
3
2
1
0
0
0.5
1.0
I
D
, DRAIN CURRENT (A)
1.5
2.0
2.5
3.0
r
D
,
V
GS
= 10V
250
μ
s PULSE TEST
DUTY CYCLE
≤
2%
T
C
= 125
o
C
T
C
= -40
o
C
T
C
= 25
o
C
O
)
RFL1N18, RFL1N20
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