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參數(shù)資料
| 型號： | RFL1N08 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1A, 80V and 100V, 1.200 Ohm, N-Channel, Power MOSFETs |
| 中文描述： | 1000 mA, 80 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-205AF |
| 文件頁數(shù)： | 3/4頁 |
| 文件大小： | 30K |
| 代理商： | RFL1N08 |
5-3
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
FIGURE 4. SATURATION CHARACTERISTICS
FIGURE 5. TRANSFER CHARACTERISTICS
FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
100
125
150
25
50
75
0
1.0
0.8
0.6
0.4
0.2
0
1.2
T
C
, CASE TEMPERATURE (
o
C)
P
0.6
0.4
0.2
0
25
50
75
100
125
150
T
C
, CASE TEMPERATURE (
o
C)
I
1.2
1.0
0.8
OPERATION IN THIS AREA
LIMITED BY R
DS(ON)
T
C
=25
o
C
T
J
= MAX RATED
R
R
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
1
10
100
1000
0.01
0.1
1
10
I
d
,
V
GS
= 7V
PULSE DURATION = 80
μ
s
1A
2
2.5
3
2
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
1
0
4
5
6
7
8
9
10
I
D
,
V
GS
= 6V
V
GS
= 5V
V
GS
= 4V
V
GS
= 8V
V
GS
= 9V
V
GS
= 10V
V
GS
= 20V
0
2
V
GS
, GATE TO SOURCE VOLTAGE (V)
4
6
8
10
0
2.0
2.5
3.0
3.5
4.0
1.5
1
0.5
I
D
,
T
C
5
o
C
T
C
= 25
o
C
T
C
2
o
C
T
C
4
o
C
T
C
= 125
o
C
T
C
= -40
o
C
V
DS
= 10V
PULSE DURATION = 80
μ
s
V
GS
= 10V
PULSE DURATION = 80
μ
s
0
1.5
0.5
1
2.0
2.5
I
D
, DRAIN CURRENT (A)
r
D
O
1.2
0.2
0.6
0.4
0.8
1
1.4
1.6
0
CASE TEMPERATURE (T
C
) = 125
o
C
T
C
= 25
o
C
T
C
= -40
o
C
RFL1N08, RFL1N10
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| RFL1N10 | 1A, 80V and 100V, 1.200 Ohm, N-Channel, Power MOSFETs |
| RFL1N10L | 1A, 100V, 1.200 Ohm, Logic Level, N-Channel Power MOSFET |
| RFL1N12L | 1A, 120V and 150V, 1.900 Ohm, Logic Level, N-Channel Power MOSFETs |
| RFL1N15L | 1A, 120V and 150V, 1.900 Ohm, Logic Level, N-Channel Power MOSFETs |
| RFL1N12 | 1A, 120V and 150V, 1.9 Ohm, N-Channel Power MOSFETs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RFL1N08L | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 1A I(D) | TO-39 |
| RFL1N10 | 制造商:Harris Corporation 功能描述: |
| RFL1N10L | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:1A, 100V, 1.200 Ohm, Logic Level, N-Channel Power MOSFET |
| RFL1N12 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RFL1N12L | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:1A, 120V and 150V, 1.900 Ohm, Logic Level, N-Channel Power MOSFETs |
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