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參數(shù)資料
| 型號(hào)： | RFL1N08 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 1A, 80V and 100V, 1.200 Ohm, N-Channel, Power MOSFETs |
| 中文描述： | 1000 mA, 80 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-205AF |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 30K |
| 代理商： | RFL1N08 |
5-2
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
RFL1N08
80
80
1
5
±
20
8.33
0.0667
-55 to 150
RFL1N10
100
100
1
5
±
20
8.33
0.0667
-55 to 150
UNITS
V
V
A
A
V
W
W/
o
C
o
C
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DS
Drain to Gate Voltage (R
GS
= 20k
)
(Note 1) . . . . . . . . . . . . . . . . . . . .V
DGR
Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current (Note 3. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . .T
L
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
260
260
o
C
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= 250
μ
A, V
GS
= 0V
RFL1N08
80
-
-
V
RFL1N10
100
-
-
V
Gate Threshold Voltage
V
GS(TH)
V
DS
= V
GS
, I
D
= 250
μ
A, (Figure 8)
2
-
4
V
Zero Gate Voltage Drain Current
I
DSS
V
GS
= Rated BV
DSS
, V
GS
= 0V
-
-
1
μ
A
V
DS
= 0.8 x Rated BV
DSS
, V
GS
= 0V, T
J
= 125
o
C
-
-
25
μ
A
On-State Drain Current (Note 2)
I
D(ON)
V
DS
> I
D(ON)
x r
DS(ON)MAX
, V
GS
= 10V
1
-
-
A
Gate to Source Leakage Current
I
GSS
V
GS
=
±
20V
-
-
±
100
nA
Drain to Source On Resistance
r
DS(ON)
I
D
= 5.6A, V
GS
= 10V, (Figures 6, 7)
1.200
Turn-On Delay Time
t
d(ON)
V
DD
= 50V, V
GS
= 10V, I
D
≈
1A, R
G
= 50
,
R
L
= 50
(Figures 10, 11, 12)
MOSFET Switching Times are Essentially Inde-
pendent of Operating Temperature
-
17
25
ns
Rise Time
t
r
-
30
45
ns
Turn-Off Delay Time
t
d(OFF)
-
30
45
ns
Fall Time
t
f
-
30
50
ns
Input Capacitance
C
ISS
V
DS
= 25V, V
GS
= 0V, f = 1MHz
(Figure 9)
-
-
200
pF
Output Capacitance
C
OSS
-
-
80
pF
Reverse Transfer Capacitance
C
RSS
-
-
25
pF
Thermal Resistance Junction to Case
R
θ
JC
-
-
o
C/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage (Note 2)
V
SD
T
J
= 25
o
C, I
SD
= 1A, V
GS
= 0V
-
-
1.4
V
Reverse Recovery Time
t
rr
T
J
= 25
o
C, I
SD
= 1A, dI
SD
/dt = 100A/
μ
s
-
100
-
ns
NOTES:
2. Pulse test: pulse width
≤
300
μ
s, duty cycle
≤
2%.
3. Repetitive rating: pulse width limited by maximum junction temperature.
RFL1N08, RFL1N10
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| RFL1N10 | 1A, 80V and 100V, 1.200 Ohm, N-Channel, Power MOSFETs |
| RFL1N10L | 1A, 100V, 1.200 Ohm, Logic Level, N-Channel Power MOSFET |
| RFL1N12L | 1A, 120V and 150V, 1.900 Ohm, Logic Level, N-Channel Power MOSFETs |
| RFL1N15L | 1A, 120V and 150V, 1.900 Ohm, Logic Level, N-Channel Power MOSFETs |
| RFL1N12 | 1A, 120V and 150V, 1.9 Ohm, N-Channel Power MOSFETs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RFL1N08L | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 1A I(D) | TO-39 |
| RFL1N10 | 制造商:Harris Corporation 功能描述: |
| RFL1N10L | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:1A, 100V, 1.200 Ohm, Logic Level, N-Channel Power MOSFET |
| RFL1N12 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RFL1N12L | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:1A, 120V and 150V, 1.900 Ohm, Logic Level, N-Channel Power MOSFETs |
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