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參數(shù)資料
| 型號(hào)： | RFK25P10 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類(lèi)： | JFETs |
| 英文描述： | -25A, -100V and -80V, 0.150 Ohm, P-Channel Power MOSFETs |
| 中文描述： | 25 A, 100 V, 0.15 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AE |
| 文件頁(yè)數(shù)： | 4/5頁(yè) |
| 文件大?。?/td> | 42K |
| 代理商： | RFK25P10 |
4
FIGURE 7. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Intersil Application Notes AN7254 and AN7260.
FIGURE 10. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT
Typical Performance Curves
Unless Otherwise Specified
(Continued)
3
2
1
-50
0
50
100
150
T
J,
JUNCTION TEMPERATURE (
o
C)
V
GS
= 10V
PULSE DURATION = 80
μ
s
I
D
= 25A
N
O
0
0.9
0.8
0.7
-50
0
50
100
150
T
J,
JUNCTION TEMPERATURE (
o
C)
V
GS
= V
DS
I
D
= 250
μ
A
N
T
1.0
1.2
1.1
1.3
0
10
V
DS,
DRAIN TO SOURCE VOLTAGE (V)
20
30
40
50
C
3000
2000
1000
C
ISS
C
OSS
C
RSS
0
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
≈
C
DS
+ C
GD
0.75BV
DSS
0.50BV
DSS
0.25BV
DSS
0.75BV
DSS
0.50BV
DSS
0.25BV
DSS
GATE
SOURCE
VOLTAGE
V
DD
= BV
DSS
V
DD
= BV
DSS
I
G(REF)
I
G(ACT)
20
80
DRAIN TO SOURCE VOLTAGE
I
G(REF)
I
G(ACT)
R
L
= 8
I
G(REF)
= 2mA
V
GS
= 10V
V
D
t, TIME (
μ
s)
V
G
,
200
150
100
50
0
10
8
6
4
0
2
RFK25N18, RFK25N20
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