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參數(shù)資料
| 型號： | RFK25P10 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | -25A, -100V and -80V, 0.150 Ohm, P-Channel Power MOSFETs |
| 中文描述： | 25 A, 100 V, 0.15 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AE |
| 文件頁數(shù)： | 3/5頁 |
| 文件大小： | 42K |
| 代理商： | RFK25P10 |
3
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
FIGURE 4. SATURATION CHARACTERISTICS
FIGURE 5. TRANSFER CHARACTERISTICS
FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs DRAIN
CURRENT
0
50
100
150
0
T
C
, CASE TEMPERATURE (
o
C)
P
0.2
0.4
0.6
0.8
1.0
1.2
0
25
50
75
100
125
150
T
C
, CASE TEMPERATURE (
o
C)
I
D
,
25
15
10
5
20
30
100
10
1
0.11
10
100
1000
I
D
,
OPERATION IN THIS AREA
MAY BE LIMITED BY r
DS(ON)
V
DS
, DRAIN TO SOURCE (V)
T
C
= 25
o
C
T
J
= MAX RATED
I
D(MAX)
CONTINUOUS
30
20
10
0
3
4
5
6
7
I
D
D
V
DS,
DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 7V
V
GS
= 4V
40
PULSE DURATION = 80
μ
s
DUTY CYCLE
≤
2%
T
C
= 25
C
V
GS
= 10V
V
GS
= 20V
2
1
V
GS
= 8V
50
60
V
GS
= 6V
V
GS
= 5V
V
DS
= 10V
PULSE DURATION = 80
μ
s
DUTY CYCLE
≤
2%
I
D
D
25
15
5
0
2
4
6
8
10
V
GS,
GATE TO SOURCE VOLTAGE (V)
35
-40
o
C
125
o
C
25
o
C
125
o
C
25
o
C
-40
o
C
r
D
D
I
D,
DRAIN CURRENT (A)
0.14
0.10
0.04
0.02
0
10
20
30
40
50
R
)
0.06
0.08
0.12
0.16
0
V
GS
= 10V
PULSE DURATION = 80
μ
s
RFK25N18, RFK25N20
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