參數(shù)資料
型號： RFG75N05E
廠商： INTERSIL CORP
元件分類： JFETs
英文描述： 75A, 50V, 0.008 Ohm, N-Channel Power MOSFET
中文描述： 75 A, 50 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
文件頁數(shù)： 2/6頁
文件大?。?/td> 53K
代理商： RFG75N05E
4-482
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
RFG75N05E
50
50
75
200
±
20
240
1.6
2
Refer to UIS SOA
Curves
-55 to 175
UNITS
V
V
A
A
V
W
W/
o
C
kV
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DSS
Drain to Gate Voltage (R
GS
= 20k
)
(Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Continuous Drain Current (Current Limited by Package). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
D
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrostatic Discharge Rating, MIL-STD-883, Category B(2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
SD
Single Pulse Avalanche Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
o
C
300
260
o
C
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
V
GS
= 0V, I
D
= 250
μ
A (Figure 9)
V
GS
= V
DS
, I
D
= 250
μ
A (Figure 8)
50
-
-
V
Gate Threshold Voltage
V
GS(TH)
2.0
-
4.0
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= Rated BV
DSS
, V
GS
= 0V
V
DS
= 0.8 x Rated BV
DSS
, V
GS
= 0V, T
C
= 150
o
C
V
GS
=
±
20V
-
-
1
μ
A
-
-
25
μ
A
Gate to Source Leakage
I
GSS
-
-
±
100
nA
Drain to Source on Resistance (Note 2)
r
DS(ON)
V
GS
= 10V, I
D
= 75A (Figure 7)
V
DD
= 25V, I
D
≈
37.5A,
R
L
= 0.67
, R
G
= 1.67
,
V
GS
= 10V,
(Figure 11)
-
-
0.008
Turn On Time
t
(ON)
-
-
125
ns
Turn On Delay Time
t
d(ON)
-
17
-
ns
Rise Time
t
r
-
75
-
ns
Turn Off Delay Time
t
d(OFF)
-
70
-
ns
Fall Time
t
f
-
17
-
ns
Turn Off Time
t
(OFF)
-
-
125
ns
Total Gate Charge
(Gate to Source + Gate to Drain)
Q
g(TOT)
V
GS
= 0, 20V
V
DD
= 40V, I
D
= 75A,
R
L
= 0.53
I
G(REF)
= 3.44mA
(Figure 11)
-
-
400
nC
Gate Charge at 10V
Q
g(10)
V
GS
= 0, 10V
-
-
220
nC
Threshold Gate Charge
Q
g(TH)
V
GS
= 0, 2V
-
-
15
nC
Junction to Case
R
θ
JC
R
θ
JA
-
-
0.625
o
C/W
Junction to Ambient
-
-
80
o
C/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage
V
SD
I
SD
= 75A
-
-
1.5
V
Diode Reverse Recovery Time
t
rr
I
SD
= 75A, dI
SD
/dt = 100A/
μ
s
-
-
125
ns
NOTES:
2. Pulse test: pulse width
≤
300
μ
s, duty cycle
≤
2%.
3. Repetitive pulse: pulse width is limited by maximum junction temperature.
4. Refer to Intersil Application Notes AN9321 and AN9322. See Figure 4.
RFG75N05E
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