參數(shù)資料
型號: RFG70N06
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: 70A, 60V, Avalanche Rated, N-Channel Enhancement-Mode Power MOSFETs
中文描述: 70 A, 60 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
封裝: TO-247, 3 PIN
文件頁數(shù): 3/8頁
文件大?。?/td> 71K
代理商: RFG70N06
4-476
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. PEAK CURRENT CAPABILITY
T
C
, CASE TEMPERATURE (
o
C)
P
0
0
25
50
75
100
175
0.2
0.4
0.6
0.8
1.0
1.2
125
150
30
10
0
25
50
75
100
125
150
50
I
D
,
T
C
, CASE TEMPERATURE (
o
C)
70
175
40
20
60
80
1
0.1
0.01
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t, RECTANGULAR PULSE DURATION (s)
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JC
x R
θ
JC
+ T
C
0.01
0.02
0.05
0.1
0.2
0.5
T
θ
J
,
P
DM
t
1
t
2
SINGLE PULSE
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
100
10
1
1
10
100
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
100
μ
s
1ms
10ms
100ms
DC
500
T
C
= 25
o
C
T
J
= MAX RATED
SINGLE PULSE
t, PULSE WIDTH (s)
50
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
100
I
D
,
1000
FOR TEMPERATURES
ABOVE 25
C DERATE PEAK
CURRENT AS FOLLOWS:
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
V
GS
= 10V
I
I25
175
-------150
T
C
=
T
C
= 25
o
C
RFG70N06, RFP70N06, RF1S70N06SM
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
RFG70N06 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET
RFG70N06_NL 制造商:Fairchild Semiconductor Corporation 功能描述:
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