參數(shù)資料
型號(hào): RFG70N06
廠商: HARRIS SEMICONDUCTOR
元件分類: JFETs
英文描述: 70A, 60V, 0.014 Ohm, N-Channel Power MOSFETs
中文描述: 70 A, 60 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
文件頁(yè)數(shù): 4/8頁(yè)
文件大?。?/td> 71K
代理商: RFG70N06
4-477
NOTE: Refer to Intersil Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY
FIGURE 7. SATURATION CHARACTERISTICS
FIGURE 8. TRANSFER CHARACTERISTICS
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
0.01
0.1
100
300
10
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
0
t
AV
= (L/R) ln [(I
AS
*R)/(1.3*RATED BV
DSS
-V
DD
) +1]
If R = 0
I
A
,
t
AV
, TIME IN AVALANCHE (ms)
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
1
10
0
80
0
1
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
2
3
5
120
160
I
D
,
V
GS
= 7V
V
GS
= 10V
200
4
V
GS
= 5V
V
GS
= 4.5V
V
GS
= 20V
V
GS
= 8V
40
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
T
C
= 25
C
V
GS
= 6V
0
4
6
8
10
2
0
40
80
120
I
D
,
V
GS
, GATE TO SOURCE VOLTAGE (V)
160
-55
o
C
25
o
C
200
175
o
C
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
0
0.5
1
1.5
-80
-40
0
40
80
120
160
N
T
J
, JUNCTION TEMPERATURE (
o
C)
200
2
2.5
V
GS
= 10V, I
D
= 70A
PULSE DURATION = 250
μ
s
DUTY CYCLE = 0.5% MAX
O
-80
-40
0
40
80
120
160
0
0.5
1.0
1.5
2.0
N
T
T
J
, JUNCTION TEMPERATURE (
o
C)
200
V
GS
= V
DS
, I
D
= 250
μ
A
2.0
1.5
1.0
0.5
0
-80
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
N
B
200
I
D
= 250
μ
A
RFG70N06, RFP70N06, RF1S70N06SM
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