參數(shù)資料
型號： RFG60P06E
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： 60A, 60V, 0.030 Ohm, ESD Rated, P-Channel Power MOSFET
中文描述： 60 A, 60 V, 0.03 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-247
文件頁數(shù)： 2/8頁
文件大?。?/td> 380K
代理商： RFG60P06E
2002 Fairchild Semiconductor Corporation
RFG60P06E Rev. B
Absolute Maximum Ratings
T
C
= 25
o
C
RFG60P06E
-60
-60
±
±
60
UNITS
V
V
V
A
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Drain to Gate Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Pulsed Drain Current (Note 3, Figure 5). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Single Pulse Avalanche Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E
Electrostatic Discharge Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E
MIL-STD-883, Category B(2)
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
Derate Above 25
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
DSS
DGR
GS
20
D
DM
Refer to Peak Current Curve
Refer to UIS Curve
2
AS
SD
KV
D
o
215
1.43
W
W/
o
C
J
, T
STG
-55 to 175
o
C
L
pkg
300
260
o
o
C
C
NOTE:
1. T
J
= 25
o
C to 150
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
I
D
V
= 250
μ
A, V
GS
= 250
= 0V
-60
-
-
V
Gate To Threshold Voltage
V
GS(TH)
I
DSS
GS
= V
DS
, I
D
μ
A
-2
-
-4
V
Zero Gate Voltage Drain Current
V
V
DS
GS
= -60V,
= 0V
T
C
= 25
o
C
o
-
-
-1
μ
A
T
C
= 150
C
-
-
-50
μ
A
Gate to Source Leakage Current
I
GSS
V
GS
= 60A, V
=
±
20V
-
-
100
nA
Drain to Source On Resistance
r
DS(ON)
t
ON
t
d(ON)
t
r
t
d(OFF)
t
f
t
OFF
Q
g(TOT)
Q
g(-10)
Q
g(TH)
C
ISS
C
OSS
C
RSS
R
θ
R
θ
I
D
V
R
R
GS
= -10V
-
-
0.030
Turn-On Time
DD
L
= 1.0
GS
= 2.5
= -30V, I
D
GS
= 30A,
= -10V,
, V
-
-
125
ns
Turn-On Delay Time
-
20
-
ns
Rise Time
-
60
-
ns
Turn-Off Delay Time
-
65
-
ns
Fall Time
-
20
-
ns
Turn-Off Time
-
-
125
ns
Total Gate Charge
V
GS
= 0 to -20V
V
I
D
R
DD
= 60A,
L
= 0.8
= -48V,
-
-
450
nC
Gate Charge at -10V
V
GS
= 0 to -10V
-
-
225
nC
Threshold Gate Charge
V
GS
= 0 to -2V
-
-
15
nC
Input Capacitance
V
f = 1MHz
DS
= -25V, V
GS
= 0V,
-
7200
-
pF
Output Capacitance
-
1700
-
pF
Reverse Transfer Capacitance
-
325
-
pF
Thermal Resistance Junction to Case
JC
-
-
0.70
o
C/W
o
C/W
Thermal Resistance Junction to Ambient
JA
-
-
80
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage
V
SD
t
rr
I
SD
= 45A
-
-
1.5
V
Diode Reverse Recovery Time
I
SD
= 45A, dI
SD
/dt = 100A/
μ
s
-
-
125
ns
NOTES:
2. Pulse test: pulse width
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
≤
300
μ
s maximum, duty cycle
≤
2%.
RFG60P06E
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