參數(shù)資料
型號： RFG60P03
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： 60A, 30V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs
中文描述： 60 A, 30 V, 0.027 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-247
文件頁數(shù)： 4/6頁
文件大?。?/td> 104K
代理商： RFG60P03
4-54
RFG60P03, RFP60P03, RF1S60P03, RF1S60P03SM
FIGURE 7. NORMALIZED r
DS(ON)
vs JUNCTION
TEMPERATURE
FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs
TEMPERATURE
FIGURE 9. NORMALIZED DRAIN SOURCE BREAKDOWN
VOLTAGE vs TEMPERATURE
FIGURE 10. NORMALIZED SWITCHING WAVEFORMS
FIGURE 11. TYPICAL CAPACITANCE vs VOLTAGE
FIGURE 12. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT. REFER TO
APPLICATION NOTE AN7254 AND AN7260
Typical Performance Curves
(Continued)
PULSE DURATION = 250
μ
s, V
GS
= -10V, I
D
= -60A
2.0
1.5
1.0
0.5
0.0
-80
-40
0
40
80
120
160
200
T
J
, JUNCTION TEMPERATURE (
o
C)
r
D
,
V
GS
= V
DS
, I
D
= - 250
μ
A
2.0
1.5
1.0
0.5
0.0
-80
-40
0
40
80
160
120
200
T
T
J
, JUNCTION TEMPERATURE (
o
C)
V
G
,
I
D
= -250
μ
A
2.0
1.5
1.0
0.5
0.0
-80
-40
0
40
80
120
160
200
B
D
,
B
T
J
, JUNCTION TEMPERATURE (
o
C)
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
25
50
75
100
125
150
175
P
T
C
, CASE TEMPERATURE (
o
C)
V
GS
= 0V, f = 1MHz
C
ISS
C
OSS
C
RSS
4000
3000
2000
1000
0
0
-5
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
-10
-15
-20
-25
C
5000
-30.0
-22.5
-15.0
-7.5
0.0
-10.0
-7.5
-5.0
-2.5
0.0
20
I
G(REF)
I
G(ACT)
80
I
G(REF)
I
G(ACT)
t, TIME (
μ
s)
V
DD
= BV
DSS
V
DD
= BV
DSS
R
L
= 0.5
I
G(REF)
= -3mA
V
GS
= -10V
0.75 BV
DSS
0.50 BV
DSS
0.25 BV
DSS
0.75 BV
DSS
0.50 BV
DSS
0.25 BV
DSS
V
D
,
V
G
,
相關(guān)PDF資料
PDF描述
RF1S60P03 60A, 30V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs
RF1S60P03SM 60A, 30V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs
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RFG60P05E 60A, 50V, 0.030 Ohm, ESD Rated, P-Channel Power MOSFET
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