參數(shù)資料
型號(hào)： RFG60P03
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： 60A, 30V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs
中文描述： 60 A, 30 V, 0.027 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-247
文件頁(yè)數(shù)： 3/6頁(yè)
文件大小： 104K
代理商： RFG60P03
4-53
RFG60P03, RFP60P03, RF1S60P03, RF1S60P03SM
Typical Performance Curves
FIGURE 1. SAFE OPERATING AREA CURVE
FIGURE 2. NORMALIZED MAXIMUM TRANSIENT THERMAL
IMPEDANCE
FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE
FIGURE 4. PEAK CURRENT CAPABILITY
FIGURE 5. TYPICAL SATURATION CHARACTERISTICS
FIGURE 6. TYPICAL TRANSFER CHARACTERISTICS
-500
-100
-10
-1
-1
-10
-60
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
T
C
= +25
o
C
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
1ms
100
μ
s
10ms
100ms
DC
V
DSS
MAX = -30V
I
D
,
10
1
0.1
0.01
10
-5
10
-4
t, RECTANGULAR PULSE DURATION (s)
10
-3
10
-2
10
-1
10
0
10
1
Z
θ
J
P
DM
t
1
t
2
NOTES:
DUTY FACTOR: D = t
1
/t
PEAK T
J
= P
DM
x Z
θ
JC
+ T
C
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
0.5
T
-50
-40
-30
-20
-10
0
25
50
75
100
125
150
175
I
D
,
T
C
, CASE TEMPERATURE (
o
C)
-60
-70
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
-10
2
-10
3
t, PULSE WIDTH (ms)
T
C
= +25
o
C
I
D
,
V
GS
= -20V
V
GS
= -10V
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
FOR TEMPERATURES ABOVE +25
o
C
DERATE PEAK CURRENT
CAPABILITY AS FOLLOWS:
I
I25
175
-------150
–
=
-50
0
0.0
-1.5
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
-3.0
-4.5
-6.0
-7.5
I
D
,
PULSE DURATION = 250
μ
s, T
C
= +25
o
C
V
GS
= -5V
V
GS
= -6V
V
GS
= -8V
V
GS
= -7V
V
GS
= -10V
-30
-60
-90
-120
V
GS
= -4.5V
V
GS
= -20V
0.0
-2.0
V
GS
, GATE-TO-SOURCE VOLTAGE (V)
-4.0
-6.0
-8.0
-10.0
I
D
,
0
PULSE TEST
PULSE DURATION = 250
μ
s
DUTY CYCLE = 0.5% MAX
-55
o
C
V
DD
= -15V
+175
o
C
+25
o
C
-30
-60
-120
-90
相關(guān)PDF資料
PDF描述
RF1S60P03 60A, 30V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs
RF1S60P03SM 60A, 30V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs
RFG60P05E 60A, 50V, 0.030 Ohm,P-Channel PowerMOSFET(60A, 50V, 0.030 Ω,P溝道增強(qiáng)型功率MOS場(chǎng)效應(yīng)管)
RFG60P05E 60A, 50V, 0.030 Ohm, ESD Rated, P-Channel Power MOSFET
RFG60P06E 60A, 60V, 0.030 Ohm, ESD Rated, P-Channel Power MOSFET(60A, 60V, 0.030 Ω,P溝道功率MOS場(chǎng)效應(yīng)管)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
RFG60P05E 功能描述:MOSFET TO-247 P-Ch Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
RFG60P06E 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
RFG6621-847H 制造商:AUTOMT 功能描述:
RFG6X8 制造商:Panduit Corp 功能描述:CBL ACC COOL BOOT RAISED FLOOR ASSY FLAME RETARDANT VINYL CO - Bulk
RFG6X8SM 制造商:Panduit Corp 功能描述:Cable Accessories Cool Boot Raised Floor Assembly Flame Retardant Vinyl Coated Fabric/Flame Retardant Thermoplastic Vulcanizate
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*