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參數(shù)資料
| 型號： | RFG50N06 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs |
| 中文描述： | 50 A, 60 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| 文件頁數(shù)： | 4/6頁 |
| 文件大小： | 47K |
| 代理商： | RFG50N06 |
4-465
FIGURE 7. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 9. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs. JUNCTION TEMPERATURE
FIGURE 10. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Intersil Application Notes AN7254 and AN7260
FIGURE 11. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT
Typical Performance Curves
Unless Otherwise Specified
(Continued)
N
T
J,
JUNCTION TEMPERATURE (C
o
)
1.5
1
0.5
0
-50
50
150
O
2
2.5
0
100
V
GS
= 10V, I
D
= 50A
200
3
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
N
T
J,
JUNCTION TEMPERATURE (C
o
)
1.2
0.8
0.4
0
-50
50
150
T1.8
0
100
V
GS
= V
DS
I
D
= 250
μ
A
200
2.0
N
T
J,
JUNCTION TEMPERATURE (C
o
)
1.2
0.8
0.4
0
-50
50
150
B 1.6
0
100
200
2.0
I
D
= 250
μ
A
2000
1000
1
25
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
5000
0
3000
4000
5
C
ISS
C
OSS
C
RSS
10
15
20
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
= C
DS
+ C
GD
50
37.5
25
12.5
0
10
8
6
4
0
2
GATE
SOURCE
VOLTAGE
I
G(REF)
I
G(ACT)
0.75BV
DSS
0.50BV
DSS
0.25 BV
DSS
V
DD
= BV
DSS
V
DD
= BV
DSS
R
L
= 1
I
G(REF)
= 1.5mA
V
GS
= 10V
V
G
,
V
D
,
t, TIME (
μ
s)
20
80
DRAIN SOURCE VOLTAGE
I
G(REF)
I
G(ACT)
0.75BV
DSS
0.50BV
DSS
0.25BV
DSS
RFG50N05, RFP50N05
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