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參數(shù)資料
| 型號： | RFG50N06 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs |
| 中文描述： | 50 A, 60 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 47K |
| 代理商： | RFG50N06 |
4-464
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
FIGURE 4. UNCLAMPED INDUCTIVE SWITCHING
FIGURE 5. SATURATION CHARACTERISTICS
FIGURE 6. TRANSFER CHARACTERISTICS
T
C
, CASE TEMPERATURE (
o
C)
25
50
75
100
125
150
175
0
P
0
0.2
0.4
0.6
0.8
1.0
1.2
10
0
50
100
T
C
, CASE TEMPERATURE (C
o
)
I
D
,
25
125
150
175
75
20
30
40
50
60
1
10
10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
1
100
100
0.1
DC
T
j
= MAX RATED
T
C
= 25
o
C
OPERATION IN THIS AREA
MAY BE LIMITED BY r
DS(ON)
10
100
0.1
1
t
AV
, TIME IN AVALANCHE (ms)
I
A
,
0.01
10
1000
If R = 0
tav = (L)(Ias)/(1.3 RATED BV
dss
- V
dd
)
If R
≠
0
tav = (L/R) In[(Ias x R)/(1.3 RATED BV
dss
- V
dd
) + 1]
Starting T
j
= 25
o
C
I
dm
Starting T
j
= 150
o
C
120
100
80
00
1
V
DS,
DRAIN TO SOURCE VOLTAGE (V)
2
3
4
5
I
D
,
20
40
60
V
GS
= 4V
PULSE DURATION = 80
μ
s
DUTY CYCLE
=
0.5% MAX
T
C
= 25
C
V
GS
= 10V
V
GS
= 8V
V
GS
= 9V
V
GS
= 7V
V
GS
= 5V
V
GS
= 6V
I
D
,
100
20
0
2.5
5
7.5
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
40
0
80
60
-55
o
C
25
o
C
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
120
175
o
C
RFG50N05, RFP50N05
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