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參數(shù)資料
| 型號(hào)： | RFG50N05L |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 50A, 50V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs |
| 中文描述： | 50 A, 50 V, 0.027 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| 文件頁數(shù)： | 4/6頁 |
| 文件大?。?/td> | 376K |
| 代理商： | RFG50N05L |
2002 Fairchild Semiconductor Corporation
RFG50N05L, RFP50N05L Rev. B
FIGURE 7. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 8. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs GATE VOLTAGE
FIGURE 9. NORMALIZED GATE THRESHOLD VOLTAGE
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Fairchild Application Notes AN7254 and AN7260.
FIGURE 12. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT
Typical Performance Curves
(Continued)
3.0
2.5
2.0
1.5
1.0
0.5
0
N
-50
0
50
100
150
T
J
, JUNCTION TEMPERATURE (
o
C)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX.
V
GS
= 5V
I
D
= 50A
O
2.0
1.5
1.2
0.8
0.4
0
N
4
5
6
7
V
GS
, GATE TO SOURCE VOLTAGE (V)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX.
I
D
= 50A, V
GS
= 5V
O
2.0
1.8
1.2
0.8
0.4
0
-50
0
50
100
150
T
J
, JUNCTION TEMPERATURE (
o
C)
N
T
V
GS
= V
DS
, I
D
= 250
μ
A
2.0
1.8
1.2
0.8
0.4
0
-50
0
50
100
150
T
J
, JUNCTION TEMPERATURE (
o
C)
N
B
I
D
= 250
μ
A
6000
5000
4000
3000
2000
1000
0
C
0
5
10
15
20
25
V
DS
, DRAIN TO SOURCE (V)
C
ISS
C
OSS
C
RSS
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
≈
C
DS
+ C
GD
50
37.5
25
12.5
0
D
0
5
10
G
R
L
= 0
I
G(REF)
= 1.25mA
DRAIN TO SOURCE VOLTAGE
GATE TO
SOURCE
VOLTAGE
V
DD
= BV
DSS
V
DD
= BV
DSS
0.75BV
DSS
0.75BV
DSS
0.50BV
DSS
0.25BV
DSS
TIME-MICROSECONDS
20
I
G(REF)
I
G(ACT)
80
I
G(REF)
I
G(ACT)
0.25BV
DSS
0.50BV
DSS
RFG50N05L, RFP50N05L
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