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參數(shù)資料
| 型號(hào)： | RFG50N05L |
| 廠(chǎng)商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 50A, 50V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs |
| 中文描述： | 50 A, 50 V, 0.027 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| 文件頁(yè)數(shù)： | 3/6頁(yè) |
| 文件大小： | 376K |
| 代理商： | RFG50N05L |
2002 Fairchild Semiconductor Corporation
RFG50N05L, RFP50N05L Rev. B
Typical Performance Curves
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
FIGURE 4. UNCLAMPED INDUCTIVE SWITCHING SAFE
OPERATING AREA
FIGURE 5. SATURATION CHARACTERISTICS
FIGURE 6. TRANSFER CHARACTERISTICS
1.2
1.0
0.8
0.6
0.4
0.2
0
P
0
25
50
75
100
125
150
T
C
, CASE TEMPERATURE (
o
C)
50
40
30
20
10
0
25
50
75
100
125
150
T
C
, CASE TEMPERATURE (
o
C)
I
D
,
100
10
1
0.1
1
10
100
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
T
C
= 25
o
C
OPERATION IN THIS
AREA LIMITED
BY r
DS(ON)
I
D
MAX CONTINUOUS
DC OPERATION
T
J
= MAX RATED
1000
100
10
I
A
,
IF R = 0
t
AV
= (L) (I
AS
) / (1.3 RATED BV
DSS
- V
DD
)
IF R = 0
T
AV
= (L/R) IN [(I
AS
*R) / (1.3 RATED BV
DSS
- V
DD
) + 1]
0.01
0.1
1
10
t
AV
, TIME IN AVALANCHE (ms)
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
I
DM
140
120
100
80
60
40
20
0
I
D
,
0
1.5
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
3.0
4.5
6.0
7.5
V
GS
= 10V
V
GS
= 4V
V
GS
= 3V
V
GS
= 2V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX.
T
C
- 25
o
C
V
GS
= 5V
0
1.5
V
GS
, GATE TO SOURCE VOLTAGE (V)
3.0
4.5
6.0
7.5
140
120
100
80
60
40
20
0
150
o
C
-55
o
C
25
o
C
V
DS
= 15V
I
D
,
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX.
T
C
- 25
o
C
RFG50N05L, RFP50N05L
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