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參數(shù)資料
| 型號(hào)： | RFD4N06LSM |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 4A, 60V, 0.600 Ohm, Logic Level, N-Channel Power MOSFETs |
| 中文描述： | 4 A, 60 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 38K |
| 代理商： | RFD4N06LSM |
6-190
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
RFD4N06L
RFD4N06LSM
60
60
±1
0
4
10
30
0.20
-55 to 175
UNITS
V
V
V
A
A
W
W/
o
C
o
C
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DS
Drain to Gate Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derated above 25
o
C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J,
T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
pkg
300
260
o
C
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 150
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= 1mA, V
GS
= 0V
V
GS
= V
DS
, I
D
= 250
μ
A
T
C
= 25
o
C, V
DS
= 50V, V
GS
= 0V
T
C
= 125
o
C, V
DS
= 50V, V
GS
= 0V
60
-
-
V
Gate to Threshold Voltage
V
GS(TH)
1
-
2.5
V
Zero Gate Voltage Drain Current
I
DSS
-
-
1
μ
A
-
-
50
μ
A
Gate to Source Leakage Current
I
GSS
V
GS
= 10V, V
DS
= 0V
-
-
100
nA
Drain to Source On Voltage (Note 2)
V
DS(ON)
I
D
= 1A, V
GS
= 5V
-
-
0.8
V
I
D
= 2A, V
GS
= 5V
-
-
2.0
V
I
D
= 4A, V
GS
= 7.5V
-
-
4.0
V
Drain to Source On Resistance (Note 2)
r
DS(ON)
I
D
= 1A, V
GS
= 5V
-
-
0.600
Forward Transconductance (Note 2)
V
(plateau)
V
DS
= 15V, I
D
= 4A
t
d(ON)
V
DD
= 30V, I
D
= 1A, R
GS
= 6.25
,
V
GS
= 5V
t
r
-
-
4.5
V
Turn-On Delay Time
-
-
20
ns
Rise Time
-
-
130
ns
Turn-Off Delay Time
t
d(OFF)
-
-
40
ns
Fall Time
t
f
-
-
160
ns
Total Gate Charge
(Gate to Source + Gate to Drain)
Q
g(TOT)
V
GS
= 0-10V
V
DD
= 48V,
I
D
= 2A,
R
L
= 24
-
-
8
nC
Gate Charge at 5V
Q
g(5)
V
GS
= 0-5V
-
-
5
nC
Threshold Gate Charge
Q
g(TH)
V
GS
= 0-1V
-
-
1
nC
Thermal Resistance Junction to Case
R
θ
JC
-
-
5
o
C/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage (Note 2)
V
SD
I
SD
= 1A
-
-
1.4
V
Reverse Recovery Time
t
rr
I
SD
= 2A, dI
SD
/dt = 100A/
μ
s
-
150
-
ns
NOTES:
2. Pulsed: pulse duration = 300
μ
s max, duty cycle = 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature.
RFD4N06L, RFD4N06LSM
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