參數(shù)資料
型號: RFD3N08
廠商: Intersil Corporation
英文描述: 3A, 80V, 0.800 Ohm, Logic Level, N-Channel Power MOSFETs
中文描述: 第3A,80V的,0.800歐姆,邏輯層次,N溝道功率MOSFET
文件頁數(shù): 5/8頁
文件大?。?/td> 69K
代理商: RFD3N08
6-30
FIGURE 12. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 13. SWITCHING TIME vs GATE RESISTANCE
FIGURE 14. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Intersil Application Notes AN7254 and AN7260.
FIGURE 15. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT
Test Circuits and Waveforms
FIGURE 16. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 17. UNCLAMPED ENERGY WAVEFORMS
Typical Performance Curves
Unless Otherwise Specified
(Continued)
-80
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
N
B
200
2.0
1.5
1.0
0.5
0
I
D
= 250
μ
A
20
20
30
40
50
0
60
40
0
10
R
GS
, GATE TO SOURCE RESISTANCE (
)
S
t
d(ON)
t
r
t
f
80
t
d(OFF)
100
V
DD
= 40V, I
D
= 3A, R
L
= 13.3
180
00
5
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
15
20
25
C
C
RSS
30
C
OSS
150
120
60
90
C
ISS
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
C
DS
+ C
GD
80
60
40
20
0
5.00
3.75
2.50
1.25
0
V
D
,
V
G
,
R
L
= 26.67
I
G(REF)
= 0.1mA
V
GS
= 5V
PLATEAU VOLTAGES IN
DESCENDING ORDER:
V
DD
= BV
DSS
V
DD
= 0.75 BV
DSS
V
DD
= 0.50 BV
DSS
V
DD
= 0.25BV
DSS
I
G(REF)
I
G(ACT)
20
I
G(REF)
I
G(ACT)
80
t, TIME (
μ
s)
t
P
V
GS
0.01
L
I
AS
+
-
V
DS
V
DD
R
G
DUT
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
0V
V
DD
V
DS
BV
DSS
t
P
I
AS
t
AV
0
RFD3N08L, RFD3N08LSM
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