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參數(shù)資料
| 型號： | RFD3N08 |
| 廠商： | Intersil Corporation |
| 英文描述： | 3A, 80V, 0.800 Ohm, Logic Level, N-Channel Power MOSFETs |
| 中文描述： | 第3A，80V的，0.800歐姆，邏輯層次，N溝道功率MOSFET |
| 文件頁數(shù)： | 4/8頁 |
| 文件大小： | 69K |
| 代理商： | RFD3N08 |
6-29
NOTE: Refer to Intersil Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY
FIGURE 7. SATURATION CHARACTERISTICS
FIGURE 8. TRANSFER CHARACTERISTICS
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 10. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 11. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
0.1
1
10
0.01
20
1
0.001
I
A
,
t
AV
, TIME IN AVALANCHE (ms)
STARTING T
J
= 150
o
C
STARTING T
J
= 25
o
C
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
If R = 0
0
2
4
6
0
2
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
4
6
8
10
8
10
V
GS
= 3V
I
D
,
V
GS
= 5V
V
GS
= 10V
V
GS
= 4V
V
GS
= 3.5V
V
GS
= 4.5V
T
C
= 25
o
C
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
0
3
4.5
6
7.5
1.5
V
GS
, GATE TO SOURCE VOLTAGE (V)
0
2
4
6
8
10
I
D
,
-55
o
C
175
o
C
25
o
C
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
0.5
1
1.5
2
2.5
0
2.5
3.5
4
4.5
5
V
GS
, GATE TO SOURCE VOLTAGE (V)
r
D
,
)
3
2
I
D
= 0.75A
I
D
= 1.5A
I
D
= 3A
I
D
= 4A
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
0
0.5
1
1.5
3
-80
-40
0
40
80
120
200
N
T
J
, JUNCTION TEMPERATURE (
o
C)
160
2.5
2
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 5V, I
D
= 3A
-80
-40
0
40
80
120
200
0
0.5
1
1.5
2
N
T
T
J
, JUNCTION TEMPERATURE (
o
C)
160
V
GS
= V
DS
, I
D
= 250
μ
A
RFD3N08L, RFD3N08LSM
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| RFD3N08L | 3A, 80V, 0.800 Ohm, Logic Level, N-Channel Power MOSFETs |
| RFD3N08LSM | 3A, 80V, 0.800 Ohm, Logic Level, N-Channel Power MOSFETs |
| RFD4N06L | 4A, 60V, 0.600 Ohm, Logic Level, N-Channel Power MOSFETs |
| RFD4N06LSM | 4A, 60V, 0.600 Ohm, Logic Level, N-Channel Power MOSFETs |
| RFD4N06L | 4A, 60V, 0.600 Ohm, Logic Level, N-Channel Power MOSFETs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RFD3N08L | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| RFD3N08LSM | 制造商:Harris Corporation 功能描述: |
| RFD3N08LSM9A | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| RFD4N06L | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RFD4N06LSM | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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