參數(shù)資料
型號(hào)： RFD3055SM
廠商： INTERSIL CORP
元件分類(lèi)： JFETs
英文描述： 12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs
中文描述： 12 A, 60 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
封裝： TO-252AA, 3 PIN
文件頁(yè)數(shù)： 4/8頁(yè)
文件大?。?/td> 82K
代理商： RFD3055SM
4-438
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
FIGURE 7. SATURATION CHARACTERISTICS
FIGURE 8. TRANSFER CHARACTERISTICS
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
TEMPERATURE
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs TEMPERATURE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
STARTING T
J
= 150
o
C
STARTING T
J
= 25
o
C
50
10
1
0.001
0.01
0.1
1
t
AV,
TIME IN AVALANCHE (ms)
If R = 0
t
AV
= (L) (I
AS
) / (1.3 RATED BV
DSS
- V
DD
)
IF R
≠
0
t
AV
= (L/R) ln [(I
AS
*R) / (1.3 RATED BV
DSS
- V
DD
) + 1]
I
A
,
24
18
12
6
0
0
1.5
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
3.0
4.5
6.0
7.5
I
D
,
V
GS
= 10V
V
GS
= 8V
V
GS
= 7V
V
GS
= 6V
V
GS
= 5V
V
GS
= 4.5V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
25
o
C
175
o
C
0
2
4
6
8
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
,
24
18
12
6
0
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
-55
o
C
V
DS
= 15V
2.5
2.0
1.5
1.0
0.5
0
-80
-40
0
40
80
120
160
200
N
T
J
, JUNCTION TEMPERATURE (
o
C)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
O
V
GS
= 10V, I
D
= 12A
2.0
1.5
1.0
0.5
0
-80
-40
0
40
80
160
120
200
T
J
, JUNCTION TEMPERATURE (
o
C)
N
V
GS
= V
DS
, I
D
= 250
μ
A
2.0
1.5
1.0
0.5
0
-80
-40
0
40
80
120
160
200
N
T
J
, JUNCTION TEMPERATURE (
o
C)
I
D
= 250
μ
A
B
RFD3055, RFD3055SM, RFP3055
相關(guān)PDF資料
PDF描述
RFD3055LESM9A TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 11A I(D) | TO-252AA
RFD3055 11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs
RFD3055SM 12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs
RFP3055 12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs
RFP3055LE 11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
RFD3055SM_Q 功能描述:MOSFET Power MOSFET N-Ch 6V/12a/.15 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
RFD3055SM9A 功能描述:MOSFET Power MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
RFD3055SM9A136 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
RFD3055SM9AS2479 制造商:Rochester Electronics LLC 功能描述:- Bulk
R-FD31G0000100C 制造商:SPC Multicomp 功能描述:CABLE TINNED - FAKRA D 100MM 制造商:SPC Multicomp 功能描述:CABLE, TINNED - FAKRA D, 100MM
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