參數(shù)資料
型號： RFD3055SM
廠商： INTERSIL CORP
元件分類： JFETs
英文描述： 12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs
中文描述： 12 A, 60 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
封裝： TO-252AA, 3 PIN
文件頁數(shù)： 3/8頁
文件大?。?/td> 82K
代理商： RFD3055SM
4-437
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. PEAK CURRENT CAPABILITY
1.2
1.0
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125
150
175
P
T
C
, CASE TEMPERATURE (
o
C)
10
8
6
4
2
0
25
50
75
100
125
150
175
I
D
,
T
C
, CASE TEMPERATURE (
o
C)
12
14
1
0.1
0.01
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t
1
, RECTANGULAR PULSE DURATION (s)
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JC
x R
θ
JC
+ T
C
0.01
0.02
0.05
0.1
0.2
0.5
T
Z
θ
J
N
P
DM
t
1
t
2
SINGLE PULSE
50
10
1
0.1
1
10
100
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
1ms
100
μ
s
10ms
DC
I
D
,
T
C
= 25
o
C
T
J
= MAX RATED
SINGLE PULSE
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
10
4
10
100
t, PULSE WIDTH (ms)
V
GS
= 20V
V
GS
= 10V
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
FOR TEMPERATURES ABOVE 25
o
C
DERATE PEAK CURRENT
CAPABILITY AS FOLLOWS:
I
I25
*
175
---------------------
–
=
I
D
,
200
T
C
= 25
o
C
RFD3055, RFD3055SM, RFP3055
相關(guān)PDF資料
PDF描述
RFD3055LESM9A TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 11A I(D) | TO-252AA
RFD3055 11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs
RFD3055SM 12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs
RFP3055 12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs
RFP3055LE 11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
RFD3055SM_Q 功能描述:MOSFET Power MOSFET N-Ch 6V/12a/.15 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
RFD3055SM9A 功能描述:MOSFET Power MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
RFD3055SM9A136 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
RFD3055SM9AS2479 制造商:Rochester Electronics LLC 功能描述:- Bulk
R-FD31G0000100C 制造商:SPC Multicomp 功能描述:CABLE TINNED - FAKRA D 100MM 制造商:SPC Multicomp 功能描述:CABLE, TINNED - FAKRA D, 100MM
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