參數(shù)資料
型號(hào)： RFD3055LESM9A
廠商： HARRIS SEMICONDUCTOR
元件分類(lèi)： JFETs
英文描述： TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 11A I(D) | TO-252AA
中文描述： 12 A, 60 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
文件頁(yè)數(shù)： 4/8頁(yè)
文件大小： 82K
代理商： RFD3055LESM9A
4-438
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
FIGURE 7. SATURATION CHARACTERISTICS
FIGURE 8. TRANSFER CHARACTERISTICS
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
TEMPERATURE
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs TEMPERATURE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
STARTING T
J
= 150
o
C
STARTING T
J
= 25
o
C
50
10
1
0.001
0.01
0.1
1
t
AV,
TIME IN AVALANCHE (ms)
If R = 0
t
AV
= (L) (I
AS
) / (1.3 RATED BV
DSS
- V
DD
)
IF R
≠
0
t
AV
= (L/R) ln [(I
AS
*R) / (1.3 RATED BV
DSS
- V
DD
) + 1]
I
A
,
24
18
12
6
0
0
1.5
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
3.0
4.5
6.0
7.5
I
D
,
V
GS
= 10V
V
GS
= 8V
V
GS
= 7V
V
GS
= 6V
V
GS
= 5V
V
GS
= 4.5V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
25
o
C
175
o
C
0
2
4
6
8
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
,
24
18
12
6
0
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
-55
o
C
V
DS
= 15V
2.5
2.0
1.5
1.0
0.5
0
-80
-40
0
40
80
120
160
200
N
T
J
, JUNCTION TEMPERATURE (
o
C)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
O
V
GS
= 10V, I
D
= 12A
2.0
1.5
1.0
0.5
0
-80
-40
0
40
80
160
120
200
T
J
, JUNCTION TEMPERATURE (
o
C)
N
V
GS
= V
DS
, I
D
= 250
μ
A
2.0
1.5
1.0
0.5
0
-80
-40
0
40
80
120
160
200
N
T
J
, JUNCTION TEMPERATURE (
o
C)
I
D
= 250
μ
A
B
RFD3055, RFD3055SM, RFP3055
相關(guān)PDF資料
PDF描述
RFD3055 11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs
RFD3055SM 12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs
RFP3055 12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs
RFP3055LE 11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs
RFD3055LE 11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs
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