參數(shù)資料
型號: RFD3055LESM9A
廠商: HARRIS SEMICONDUCTOR
元件分類: JFETs
英文描述: TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 11A I(D) | TO-252AA
中文描述: 12 A, 60 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
文件頁數(shù): 3/8頁
文件大?。?/td> 82K
代理商: RFD3055LESM9A
4-437
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. PEAK CURRENT CAPABILITY
1.2
1.0
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125
150
175
P
T
C
, CASE TEMPERATURE (
o
C)
10
8
6
4
2
0
25
50
75
100
125
150
175
I
D
,
T
C
, CASE TEMPERATURE (
o
C)
12
14
1
0.1
0.01
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t
1
, RECTANGULAR PULSE DURATION (s)
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JC
x R
θ
JC
+ T
C
0.01
0.02
0.05
0.1
0.2
0.5
T
Z
θ
J
N
P
DM
t
1
t
2
SINGLE PULSE
50
10
1
0.1
1
10
100
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
1ms
100
μ
s
10ms
DC
I
D
,
T
C
= 25
o
C
T
J
= MAX RATED
SINGLE PULSE
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
10
4
10
100
t, PULSE WIDTH (ms)
V
GS
= 20V
V
GS
= 10V
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
FOR TEMPERATURES ABOVE 25
o
C
DERATE PEAK CURRENT
CAPABILITY AS FOLLOWS:
I
I25
*
175
---------------------
=
I
D
,
200
T
C
= 25
o
C
RFD3055, RFD3055SM, RFP3055
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