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參數(shù)資料
| 型號： | RFD16N03L |
| 廠商： | INTERSIL CORP |
| 元件分類： | JFETs |
| 英文描述： | 16A, 30V, 0.025 Ohm, Logic Level,N-Channel Power MOSFETs(16A, 30V, 0.025 Ω, N溝道功率MOS場效應(yīng)管) |
| 中文描述： | 16 A, 30 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA |
| 文件頁數(shù)： | 7/8頁 |
| 文件大?。?/td> | 107K |
| 代理商： | RFD16N03L |
6-162
PSPICE Electrical Model
.SUBCKT RFD16N03L 2 1 3;
CA 12 8 2.55e-9
CB 15 14 2.64e-9
CIN 6 8 1.45e-9
rev 12/12/94
DBODY 7 5 DBDMOD
DBREAK 5 11 DBKMOD
DPLCAP 10 5 DPLCAPMOD
EBREAK 11 7 17 18 33.3
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 6 10 6 8 1
EVTO 20 6 18 8 1
IT 8 17 1
LDRAIN 2 5 1e-9
LGATE 1 9 3.4e-9
LSOURCE 3 7 3.4e-9
MOS1 16 6 8 8 MOSMOD M = 0.99
MOS2 16 21 8 8 MOSMOD M = 0.01
RBREAK 17 18 RBKMOD 1
RDRAIN 50 16 RDSMOD 0.14e-3
RGATE 9 20 0.89
RIN 6 8 1e9
RSCL1 5 51 RSCLMOD 1e-6
RSCL2 5 50 1e3
RSOURCE 8 7 RDSMOD 10.31e-3
RVTO 18 19 RVTOMOD 1
S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD
VBAT 8 19 DC 1
VTO 21 6 0.583
ESCL 51 50 VALUE = {(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)*1e6/176,6))}
.MODEL DBDMOD D (IS = 3.61e-13 RS = 5.06e-3 TRS1 = 3.05e-3 TRS2 = 7.57e-6 CJO = 2.16e-9 TT = 2.18e-8)
.MODEL DBKMOD D (RS = 1.66e-1 TRS1 = -2.97e-3 TRS2 = 7.57e-6)
.MODEL DPLCAPMOD D (CJO = 0.96e-9 IS = 1e-30 N = 10)
.MODEL MOSMOD NMOS (VTO = 2.313 KP = 53.82 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u)
.MODEL RBKMOD RES (TC1 = 8.95e-4 TC2 = -1e-7)
.MODEL RDSMOD RES (TC1 = 3.92e-3 TC2 = 1.29e-5)
.MODEL RSCLMOD RES (TC1 = 2.03e-3 TC2 = 0.45e-5)
.MODEL RVTOMOD RES (TC1 = -2.27e-3 TC2 = -5.75e-7)
.MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -4.82 VOFF= -2.82)
.MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -2.82 VOFF= -4.82)
.MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -2.67 VOFF= 2.33)
.MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 2.33 VOFF= -2.67)
.ENDS
NOTE: For further discussion of the PSPICE model, consult
A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options
; written by William J. Hepp and C. Frank Wheatley.
MOS1
10
DPLCAP
RDRAIN
DBREAK
LDRAIN
DRAIN
LSOURCE
DBODY
RSOURCE
EBREAK
MOS2
RIN
CIN
VTO
ESG
CA
EVTO
+
RGATE
GATE LGATE
1
5
2
11
21
8
6
16
20
9
18
8
6
8
+
-
-
+
-
+
-
3
SOURCE
RBREAK
RVTO
VBAT
+
-
19
IT
EDS
EGS
S1A
S2A
S2B
S1B
CB
18
17
7
12
15
14
13
13
8
14
13
5
8
+
-
+
-
5
51
RSCL2
RSCL1
ESCL
6
8
17
18
RFD16N03L, RFD16N03LSM
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| RFD16N03LSM | 16A, 30V, 0.025 Ohm, Logic Level,N-Channel Power MOSFETs(16A, 30V, 0.025 Ω, N溝道功率MOS場效應(yīng)管) |
| RFD16N05L | 16A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs(16A, 50V, 0.047 Ω N 溝道功率MOS場效應(yīng)管) |
| RFD16N05LSM | 16A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs(16A, 50V, 0.047 Ω N 溝道功率MOS場效應(yīng)管) |
| RFD16N06LE | 16A, 60V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs |
| RFD16N06LESM | 16A, 60V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RFD16N03LSM | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RFD16N03LSM9A | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RFD16N03LSM9AR4610 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RFD16N05 | 功能描述:MOSFET TO-251AA N-Ch Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RFD16N05 | 制造商:Intersil Corporation 功能描述:MOSFET N I-PAK |
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