參數(shù)資料
型號(hào)： RFD16N03L
廠商： INTERSIL CORP
元件分類： JFETs
英文描述： 16A, 30V, 0.025 Ohm, Logic Level,N-Channel Power MOSFETs(16A, 30V, 0.025 Ω, N溝道功率MOS場(chǎng)效應(yīng)管)
中文描述： 16 A, 30 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
文件頁(yè)數(shù)： 5/8頁(yè)
文件大?。?/td> 107K
代理商： RFD16N03L
6-160
FIGURE 12. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 13. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 14. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Intersil Application Notes AN7254 and AN7260.
FIGURE 15. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT
Test Circuits and Waveforms
FIGURE 16. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 17. UNCLAMPED ENERGY WAVEFORMS
Typical Performance Curves
Unless Otherwise Specified
(Continued)
-80
-40
0
40
80
120
160
0
0.5
1.0
1.5
2.0
N
T
T
J
, JUNCTION TEMPERATURE (
o
C)
200
V
GS
= V
DS
, I
D
= 250
μ
A
2.0
1.5
1.0
0.5
0
-80
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
N
B
200
I
D
= 250
μ
A
2500
500
0
0
5
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
15
20
25
C
1500
C
ISS
C
OSS
C
RSS
2000
1000
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
≈
C
DS
+ C
GD
24
18
12
6
0
5
3
2
1
0
V
DD
= BV
DSS
V
DD
= BV
DSS
V
D
,
V
G
,
0.25 BV
DSS
R
L
= 1.875
I
G(REF)
= 0.6mA
V
GS
= 5V
4
30
I
G(REF)
I
G(ACT)
t, TIME (s)
20
I
G(REF)
I
G(ACT)
80
0.75 BV
DSS
0.50 BV
DSS
t
P
V
GS
0.01
L
I
AS
+
-
V
DS
V
DD
R
G
DUT
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
0V
V
DD
V
DS
BV
DSS
t
P
I
AS
t
AV
0
RFD16N03L, RFD16N03LSM
相關(guān)PDF資料
PDF描述
RFD16N03LSM 16A, 30V, 0.025 Ohm, Logic Level,N-Channel Power MOSFETs(16A, 30V, 0.025 Ω, N溝道功率MOS場(chǎng)效應(yīng)管)
RFD16N05L 16A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs(16A, 50V, 0.047 Ω N 溝道功率MOS場(chǎng)效應(yīng)管)
RFD16N05LSM 16A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs(16A, 50V, 0.047 Ω N 溝道功率MOS場(chǎng)效應(yīng)管)
RFD16N06LE 16A, 60V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs
RFD16N06LESM 16A, 60V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
RFD16N03LSM 制造商:Rochester Electronics LLC 功能描述:- Bulk
RFD16N03LSM9A 制造商:Rochester Electronics LLC 功能描述:- Bulk
RFD16N03LSM9AR4610 制造商:Rochester Electronics LLC 功能描述:- Bulk
RFD16N05 功能描述:MOSFET TO-251AA N-Ch Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
RFD16N05 制造商:Intersil Corporation 功能描述:MOSFET N I-PAK
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