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參數(shù)資料
| 型號(hào)： | RFD16N02LSM |
| 廠商： | INTERSIL CORP |
| 元件分類： | JFETs |
| 英文描述： | 16A, 20V, 0.022 Ohm, N-Channel, Logic Level, Power MOSFET(16A, 20V, 0.022 Ω, N溝道,邏輯電平,功率MOS場(chǎng)效應(yīng)管) |
| 中文描述： | 16 A, 20 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 文件頁(yè)數(shù)： | 4/8頁(yè) |
| 文件大小： | 74K |
| 代理商： | RFD16N02LSM |
4
NOTE: Refer to Intersil Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
FIGURE 7. SATURATION CHARACTERISTICS
FIGURE 8. TRANSFER CHARACTERISTICS
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs
GATE VOLTAGE AND DRAIN CURRENT
FIGURE 10. SWITCHING TIME AS A FUNCTION OF GATE
RESISTANCE
FIGURE 11. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
Typical Performance Curves
(Continued)
0.01
0.1
10
10
0.001
200
1
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
-V
DD
) +1]
If R = 0
I
A
,
t
AV
, TIME IN AVALANCHE (ms)
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
100
1
100
0
25
0
1
2
3
5
50
75
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 4V
V
GS
= 10V
100
4
V
GS
= 3V
V
GS
= 5V
V
GS
= 4.5V
V
GS
= 3.5V
PULSE DURATION = 250
μ
s, T
C
= 25
o
C
0
3.0
4.5
6.0
7.5
1.5
0
25
50
75
175
o
C
PULSE TEST
PULSE DURATION = 250
μ
s
DUTY CYCLE = 0.5% MAX
I
D
,
V
GS
, GATE TO SOURCE VOLTAGE (V)
-55
o
C
100
25
o
C
V
DD
= 15V
0
25
50
75
2.5
3.0
V
GS
, GATE TO SOURCE VOLTAGE (V)
3.5
r
D
,
)
4.0
100
I
D
= 16A
I
D
= 8A
I
D
= 32A
I
D
= 2A
4.5
5.0
T
J
= 25
o
C, PULSE DURATION = 250
μ
s
0
50
100
150
200
0
10
20
30
40
S
R
GS
, GATE TO SOURCE RESISTANCE (
)
50
250
t
r
t
f
t
d(ON)
t
d(OFF)
V
DD
= 15V, I
D
= 16A, R
L
= 0.93
0
0.5
1.0
1.5
2.0
-80
-40
0
40
80
120
160
N
T
J
, JUNCTION TEMPERATURE (
o
C)
200
I
D
= 16A
V
GS
= 5V,
PULSE DURATION = 250
μ
s,
RFD16N02L, RFD16N02LSM
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