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參數(shù)資料
| 型號： | RFD16N02LSM |
| 廠商： | INTERSIL CORP |
| 元件分類： | JFETs |
| 英文描述： | 16A, 20V, 0.022 Ohm, N-Channel, Logic Level, Power MOSFET(16A, 20V, 0.022 Ω, N溝道,邏輯電平,功率MOS場效應管) |
| 中文描述： | 16 A, 20 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 74K |
| 代理商： | RFD16N02LSM |
3
Typical Performance Curves
FIGURE 1. NORMALIZED POWER DISSIPATION vs
TEMPERATURE DERATING
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. PEAK CURRENT CAPABILITY
T
C
, CASE TEMPERATURE (
o
C)
P
0
0
25
50
75
100
175
0.2
0.4
0.6
0.8
1.0
1.2
125
150
10
5
0
25
50
75
100
125
150
I
D
,
T
C
, CASE TEMPERATURE (
o
C)
20
175
15
t, RECTANGULAR PULSE DURATION (s)
10
1
Z
θ
J
,
T
10
-3
10
-2
10
-1
10
0
1
10
-5
P
DM
t
1
t
2
SINGLE PULSE
.01
.02
.05
0.1
0.2
0.5
10
-4
2
0.01
0.1
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x R
θ
JC
x Z
θ
JC
+ T
C
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
50
1
500
10
1
I
D
,
DC
100
μ
s
1ms
10ms
100ms
LIMITED BY r
DS(ON)
AREA MAY BE
OPERATION IN THIS
100
V
DSS
MAX = 20V
T
C
= 25
o
C
T
J
= MAX RATED
t, PULSE WIDTH (s)
10
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
100
I
D
,
500
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
I
=
I
25
175 - T
C
150
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
V
GS
= 10V
V
GS
= 5V
T
C
= 25
o
C
RFD16N02L, RFD16N02LSM
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| RFD16N03 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:16A, 30V, 0.025 Ohm, Logic Level, N-Channel Power MOSFETs |
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| RFD16N03LSM | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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| RFD16N03LSM9AR4610 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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