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參數(shù)資料
| 型號(hào)： | RFD15P06 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 15A, 60V, 0.150 Ohm, P-Channel Power MOSFETs(15A, 60V, 0.150 Ω,P溝道功率MOS場(chǎng)效應(yīng)管) |
| 中文描述： | 15 A, 60 V, 0.15 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251AA |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 87K |
| 代理商： | RFD15P06 |
4-106
NOTE: Refer to Intersil Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
FIGURE 7. SATURATION CHARACTERISTICS
FIGURE 8. TRANSFER CHARACTERISTICS
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
-10
-50
-1
0.1
1
10
100
t
AV
, TIME IN AVALANCHE (ms)
I
A
,
STARTING T
J
= 150
o
C
STARTING T
J
= 25
o
C
t
AV
= (L) (I
AS
) / (1.3RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R) ln [(I
AS
*R) / (1.3 RATED BV
DSS
- V
DD
) + 1]
If R = 0
0
0
-1.5
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
-3.0
-4.5
-6.0
-7.5
I
D
,
V
GS
= -5V
V
GS
= -6V
V
GS
= -8V
V
GS
= -7V
V
GS
= -10V
-10
-20
-40
V
GS
= -4.5V
-30
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
T
C
= 25
o
C
V
GS
= -20V
0
-2
V
GS
, GATE TO SOURCE VOLTAGE (V)
-4
-6
-8
-10
I
D
,
0
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= -15V
-55
o
C
175
o
C
25
o
C
-8
-16
-32
-24
-40
2.0
1.5
1.0
0.5
0
-80
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
N
2.5
200
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
O
V
GS
= -10V, I
D
= 15A
2.0
1.5
1.0
0.5
0
-80
-40
0
40
80
160
120
T
J
, JUNCTION TEMPERATURE (
o
C)
N
200
V
GS
= V
DS
, I
D
= 250
μ
A
2.0
1.5
1.0
0.5
0
-80
-40
0
40
80
120
160
N
B
T
J
, JUNCTION TEMPERATURE (
o
C)
200
I
D
= 250
μ
A
RFD15P06, RFD15P06SM, RFP15P06
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RFD15P06SM | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
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