- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄374586 > RFD15N06LESM (INTERSIL CORP) 15A, 60V, 0.065 Ohm, ESD Rated, Logic Level, N-Channel Power MOSFETs(15A, 60V, 0.065 Ω,邏輯電平,N溝道功率MOS場效應(yīng)管) PDF資料下載
參數(shù)資料
| 型號： | RFD15N06LESM |
| 廠商： | INTERSIL CORP |
| 元件分類： | JFETs |
| 英文描述： | 15A, 60V, 0.065 Ohm, ESD Rated, Logic Level, N-Channel Power MOSFETs(15A, 60V, 0.065 Ω,邏輯電平,N溝道功率MOS場效應(yīng)管) |
| 中文描述： | 15 A, 60 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 文件頁數(shù)： | 7/8頁 |
| 文件大小： | 95K |
| 代理商： | RFD15N06LESM |
6-155
PSPICE Electrical Model
SUBCKT RFD15N06LE 2 1 3 ;
rev 5/13/95
CA 12 8 2.50e-9
CB 15 14 2.4e-9
CIN 6 8 7.70e-10
DBODY 7 5 DBODYMOD
DBREAK 5 11 DBREAKMOD
DESD1 91 9 DESD1MOD
DESD2 91 7 DESD2MOD
DPLCAP 10 5 DPLCAPMOD
EBREAK 11 7 17 18 65.18
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 6 10 6 8 1
EVTHRES 6 21 19 8 1
EVTEMP 20 6 18 22 1
IT 8 17 1
LDRAIN 2 5 1e-9
LGATE 1 9 2.77e-9
LSOURCE 3 7 2.98e-9
MMED 16 6 8 8 MMEDMOD
MSTRO 16 6 8 8 MSTROMOD
MWEAK 16 21 8 8 MWEAKMOD
RBREAK 17 18 RBREAKMOD 1
RDRAIN 50 16 RDRAINMOD 14.52e-3
RGATE 9 20 2.6
RLDRAIN 2 5 10
RLGATE 1 9 27.7
RLSOURCE 3 7 29.8
RSLC1 5 51 RSLCMOD 1e-6
RSLC2 5 50 1e3
RSOURCE 8 7 RSOURCEMOD 20.05e-3
RVTHRES 22 8 RVTHRESMOD 1
RVTEMP 18 19 RVTEMPMOD 1
S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD
VBAT 22 19 DC 1
ESLC 51 50 VALUE = {(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*72),5))}
.MODEL DBODYMOD D (IS = 6.5e-13 RS = 1.20e-2 TRS1 = 1.75e-3 TRS2 = 5.08e-6 CJO = 7.45e-10 TT = 4.61e-8 M = 0.46)
.MODEL DBREAKMOD D (RS = 1.28e-1 TRS1 = -2.15e-3 TRS2 = 1.05e-5)
.MODEL DESD1MOD D (BV = 12.7 TBV1 = 0 TBV2 = 0 RS = 35 TRS1 = 1.2e-6 TRS2 = 0)
.MODEL DESD2MOD D (BV = 12.7 TBV1 = 0 TBV2 = 0 RS = 0 TRS1 =0 TRS2 = 0)
.MODEL DPLCAPMOD D (CJO = 4.32e-10 IS = 1e-30 N = 10 M = 0.54)
.MODEL MMEDMOD NMOS (VTO = 1.60 KP = 1.75 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 2.60)
.MODEL MSTROMOD NMOS (VTO = 1.93 KP = 26.0 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u)
.MODEL MWEAKMOD NMOS (VTO = 1.39 KP = 0.09 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 26.0 RS = 0.1)
.MODEL RBREAKMOD RES (TC1 = 9.76e-4 TC2 = 5.11e-7)
.MODEL RDRAINMOD RES (TC1 = 1.30e-2 TC2 = 4.49e-5)
.MODEL RSLCMOD RES (TC1 =3.00e-3 TC2 = 6.00e-6)
.MODEL RSOURCEMOD RES (TC1 = 0 TC2 = 0)
.MODEL RVTHRESMOD RES (TC1 = -1.43e-3 TC2 = -6.72e-6)
.MODEL RVTEMPMOD RES (TC1 = -9.91e-4 TC2 = 1.02e-6)
.MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -4.85 VOFF = -1.85)
.MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -1.85 VOFF = -4.85)
.MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -1.35 VOFF = 1.65)
.MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 1.65 VOFF = -1.35
.ENDS
NOTE: For further discussion of the PSPICE model, consult
A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global Temperature
Options
; IEEE Power Electronics Specialist Conference Records, 1991.
1
GATE
RGATE
EVTEMP
18
22
20
9
+
12
13
8
14
13
13
15
S1A
S1B
S2A
S2B
CA
CB
EGS
EDS
CIN
MWEAK
RDRAIN
16
DBREAK
EBREAK
DBODY
DRAIN
2
RSOURCE
SOURCE
3
RBREAK
RVTEMP
VBAT
IT
+
19
8
ESG
DPLCAP
ESLC
RSLC1
51
+
RSLC2
6
6
8
10
5
50
5
51
21
11
17
18
8
14
5
8
6
8
7
17
18
19
+
+
+
+
+
22
MMED
MSTRO
RVTHRES
LSOURCE
RLSOURCE
LDRAIN
RLDRAIN
LGATE
RLGATE
91
DESD2
DESD1
8
RFD15N06LE, RFD15N06LESM
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| RFD15P05SM | 15A, 50V, 0.150 Ohm,N-Channel PowerMOSFET(15A, 50V, 0.150 Ω,P溝道增強(qiáng)型功率MOS場效應(yīng)管) |
| RFD15P05 | 15A, 50V, 0.150 Ohm,N-Channel PowerMOSFET(15A, 50V, 0.150 Ω,P溝道增強(qiáng)型功率MOS場效應(yīng)管) |
| RFD15P06SM | 15A, 60V, 0.150 Ohm, P-Channel Power MOSFETs(15A, 60V, 0.150 Ω,P溝道功率MOS場效應(yīng)管) |
| RFD15P06 | 15A, 60V, 0.150 Ohm, P-Channel Power MOSFETs(15A, 60V, 0.150 Ω,P溝道功率MOS場效應(yīng)管) |
| RFD16N02L | 16A, 20V, 0.022 Ohm, N-Channel, Logic Level, Power MOSFET(16A, 20V, 0.022 Ω, N溝道,邏輯電平,功率MOS場效應(yīng)管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RFD15P05 | 功能描述:MOSFET TO-251AA P-Ch Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RFD15P05SM | 功能描述:MOSFET TO-252AA P-Ch Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RFD15P05SM9A | 功能描述:MOSFET TO-252 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RFD15P06 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:15A, 60V, 0.150 Ohm, P-Channel Power MOSFETs |
| RFD15P06SM | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。